GT50Q101 Datasheet and Replacement
Type Designator: GT50Q101
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 180 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Ic| ⓘ - Maximum Collector Current: 50 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 4(max) V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Package: TO264
GT50Q101 substitution
GT50Q101 Datasheet (PDF)
Datasheet: GT50G101 , GT50G102 , GT50J101 , GT50J102 , GT50J301 , GT50J322 , GT50L101 , GT50M101 , GT45F122 , GT50S101 , GT50T101 , GT5G101 , GT5G102 , GT5G102LB , GT5G103 , GT5G103LB , GT60J101 .
History: IXGH40N30BS | NGTB30N120IHLWG | NTE3322
Keywords - GT50Q101 transistor datasheet
GT50Q101 cross reference
GT50Q101 equivalent finder
GT50Q101 lookup
GT50Q101 substitution
GT50Q101 replacement
History: IXGH40N30BS | NGTB30N120IHLWG | NTE3322
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