GT50Q101 Specs and Replacement
Type Designator: GT50Q101
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 180 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Ic| ⓘ - Maximum Collector Current: 50 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 4(max) V @25℃
Package: TO264
GT50Q101 Substitution - IGBTⓘ Cross-Reference Search
GT50Q101 datasheet
Specs: GT50G101, GT50G102, GT50J101, GT50J102, GT50J301, GT50J322, GT50L101, GT50M101, RJH3047, GT50S101, GT50T101, GT5G101, GT5G102, GT5G102LB, GT5G103, GT5G103LB, GT60J101
Keywords - GT50Q101 transistor spec
GT50Q101 cross reference
GT50Q101 equivalent finder
GT50Q101 lookup
GT50Q101 substitution
GT50Q101 replacement
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