All IGBT. IRGB8B60K Datasheet

 

IRGB8B60K Datasheet and Replacement


   Type Designator: IRGB8B60K
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 167 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 28 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.5 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 22 nS
   Coesⓘ - Output Capacitance, typ: 38 pF
   Qgⓘ - Total Gate Charge, typ: 29 nC
   Package: TO220AB
      - IGBT Cross-Reference

 

IRGB8B60K Datasheet (PDF)

 ..1. Size:472K  international rectifier
 irgb8b60k.pdf pdf_icon

IRGB8B60K

PD - 94545CIRGB8B60KIRGS8B60KINSULATED GATE BIPOLAR TRANSISTORIRGSL8B60KCFeaturesVCES = 600V Low VCE (on) Non Punch Through IGBT Technology. 10s Short Circuit Capability.IC = 20A, TC=100C Square RBSOA. Positive VCE (on) Temperature Coefficient. Gtsc>10s, TJ=150CEVCE(on) typ. = 1.8Vn-channelBenefits Benchmark Efficiency for Motor Control

Datasheet: IRGB4062D , IRGB4064D , IRGB4086 , IRGB4B60K , IRGB4B60KD1 , IRGB5B120KD , IRGB6B60K , IRGB6B60KD , GT30F132 , IRGI4086 , IRGI4090 , IRGIB10B60KD1 , IRGIB15B60KD1 , IRGIB6B60KD , IRGIB7B60KD , IRGP20B120UD-E , IRGP20B120U-E .

History: AP50G60SW

Keywords - IRGB8B60K transistor datasheet

 IRGB8B60K cross reference
 IRGB8B60K equivalent finder
 IRGB8B60K lookup
 IRGB8B60K substitution
 IRGB8B60K replacement

 

 
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