IRGB8B60K PDF and Equivalents Search

 

IRGB8B60K Specs and Replacement

Type Designator: IRGB8B60K

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 167 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 28 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃

tr ⓘ - Rise Time, typ: 22 nS

Coesⓘ - Output Capacitance, typ: 38 pF

Package: TO220AB

 IRGB8B60K Substitution

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IRGB8B60K datasheet

 ..1. Size:472K  international rectifier
 irgb8b60k.pdf pdf_icon

IRGB8B60K

PD - 94545C IRGB8B60K IRGS8B60K INSULATED GATE BIPOLAR TRANSISTOR IRGSL8B60K C Features VCES = 600V Low VCE (on) Non Punch Through IGBT Technology. 10 s Short Circuit Capability. IC = 20A, TC=100 C Square RBSOA. Positive VCE (on) Temperature Coefficient. G tsc>10 s, TJ=150 C E VCE(on) typ. = 1.8V n-channel Benefits Benchmark Efficiency for Motor Control... See More ⇒

Specs: IRGB4062D , IRGB4064D , IRGB4086 , IRGB4B60K , IRGB4B60KD1 , IRGB5B120KD , IRGB6B60K , IRGB6B60KD , IRG4PC50W , IRGI4086 , IRGI4090 , IRGIB10B60KD1 , IRGIB15B60KD1 , IRGIB6B60KD , IRGIB7B60KD , IRGP20B120UD-E , IRGP20B120U-E .

Keywords - IRGB8B60K transistor spec

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