All IGBT. IRGP4062D Datasheet

 

IRGP4062D IGBT. Datasheet pdf. Equivalent


   Type Designator: IRGP4062D
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 250 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 48 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 22 nS
   Coesⓘ - Output Capacitance, typ: 129 pF
   Qgⓘ - Total Gate Charge, typ: 50 nC
   Package: TO247

 IRGP4062D Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IRGP4062D Datasheet (PDF)

 ..1. Size:434K  international rectifier
 irgp4062d.pdf

IRGP4062D IRGP4062D

IRGB4062DPbFIRGP4062DPbFIRGP4062D-EPbFINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeaturesVCES = 600V Low VCE (ON) Trench IGBT Technology Low switching lossesIC = 24A, TC = 100C Maximum Junction temperature 175 C 5 S short circuit SOAG tSC 5s, TJ(max) = 175C Square RBSOA 100% of the parts tested for ILM E

 0.1. Size:314K  international rectifier
 auirgp4062d.pdf

IRGP4062D IRGP4062D

PD - 96353AAUIRGP4062DAUIRGP4062D-EINSULATED GATE BIPOLAR TRANSISTOR WITHCULTRAFAST SOFT RECOVERY DIODEVCES = 600VFeaturesIC = 24A, TC = 100C Low VCE (on) Trench IGBT Technology Low Switching LossesGtSC 5s, TJ(max) = 175C 5s SCSOA Square RBSOAEVCE(on) typ. = 1.60V 100% of The Parts Tested for ILM Positive VCE (on) Temperature Co

 0.2. Size:434K  international rectifier
 irgp4062d-e.pdf

IRGP4062D IRGP4062D

IRGB4062DPbFIRGP4062DPbFIRGP4062D-EPbFINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeaturesVCES = 600V Low VCE (ON) Trench IGBT Technology Low switching lossesIC = 24A, TC = 100C Maximum Junction temperature 175 C 5 S short circuit SOAG tSC 5s, TJ(max) = 175C Square RBSOA 100% of the parts tested for ILM E

 0.3. Size:621K  international rectifier
 auirgb4062d auirgp4062d auirgp4062d-e.pdf

IRGP4062D IRGP4062D

PD - 96353AUIRGB4062DAUIRGP4062DAUIRGP4062D-ECINSULATED GATE BIPOLAR TRANSISTOR WITH VCES = 600VULTRAFAST SOFT RECOVERY DIODEIC = 24A, TC = 100CFeatures Low VCE (on) Trench IGBT TechnologyGtSC 5s, TJ(max) = 175C Low Switching Losses 5s SCSOAE Square RBSOAVCE(on) typ. = 1.60V 100% of The Parts Tested for ILM n-channel Positive V

 0.4. Size:432K  international rectifier
 auirgp4062d1.pdf

IRGP4062D IRGP4062D

AUIRGP4062D1AUTOMOTIVE GRADE AUIRGP4062D1-EINSULATED GATE BIPOLAR TRANSISTOR WITHCVCES = 600VULTRAFAST SOFT RECOVERY DIODEFeatures Low VCE (on) Trench IGBT Technology IC(Nominal) = 24A Low Switching Losses 5s SCSOAGtSC 5s, TJ(max) = 175C Square RBSOA 100% of The Parts Tested for ILM Positive VCE (on) Temperature Coefficient. EVCE(on) ty

 0.5. Size:554K  infineon
 auirgp4062d auirgp4062d-e.pdf

IRGP4062D IRGP4062D

AUIRGP4062D AUIRGP4062D-E AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features CVCES = 600V Low VCE (on) Trench IGBT Technology Low Switching Losses IC = 24A, TC = 100C 5s SCSOA GtSC 5s, TJ(max) = 175C Square RBSOA E 100% of The Parts Tested for ILM V typ. = 1.60V CE(on)n-channel

 0.6. Size:415K  infineon
 irgp4062dpbf irgb4062dpbf irgp4062d-epbf.pdf

IRGP4062D IRGP4062D

IRGB4062DPbFIRGP4062DPbFIRGP4062D-EPbFINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeaturesVCES = 600V Low VCE (ON) Trench IGBT Technology Low switching lossesIC = 24A, TC = 100C Maximum Junction temperature 175 C 5 S short circuit SOAG tSC 5s, TJ(max) = 175C Square RBSOA 100% of the parts tested for ILM E

Datasheet: IRGP20B120UD-E , IRGP20B120U-E , IRGP20B60PD , IRGP30B120KD-E , IRGP30B60KD-E , IRGP35B60PD , IRGP35B60PD-EP , IRGP4050 , GT60N321 , IRGP4063 , IRGP4063D , IRGP4066 , IRGP4066D , IRGP4066D-E , IRGP4066-E , IRGP4068D , IRGP4068D-E .

 

 
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