Справочник IGBT. IRGP4062D

 

IRGP4062D - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.

Наименование: IRGP4062D

Тип управляющего канала: N-Channel

Максимальная рассеиваемая мощность (Pc): 250

Предельно-допустимое напряжение коллектор-эмиттер (Uce): 600

Напряжение насыщения коллектор-эмиттер (Ucesat): 1.95

Максимальный постоянный ток коллектора (Ic): 48

Корпус: TO247

Аналог (замена) для IRGP4062D

 

 

IRGP4062D Datasheet (PDF)

1.1. auirgp4062d1.pdf Size:432K _international_rectifier

IRGP4062D
IRGP4062D

AUIRGP4062D1 AUTOMOTIVE GRADE AUIRGP4062D1-E INSULATED GATE BIPOLAR TRANSISTOR WITH C VCES = 600V ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Trench IGBT Technology IC(Nominal) = 24A • Low Switching Losses • 5μs SCSOA G tSC ≥ 5μs, TJ(max) = 175°C • Square RBSOA • 100% of The Parts Tested for ILM • Positive VCE (on) Temperature Coefficient. E VCE(on) ty

1.2. auirgp4062d.pdf Size:314K _international_rectifier

IRGP4062D
IRGP4062D

PD - 96353A AUIRGP4062D AUIRGP4062D-E INSULATED GATE BIPOLAR TRANSISTOR WITH C ULTRAFAST SOFT RECOVERY DIODE VCES = 600V Features IC = 24A, TC = 100°C • Low VCE (on) Trench IGBT Technology • Low Switching Losses G tSC ≥ 5μs, TJ(max) = 175°C • 5μs SCSOA • Square RBSOA E VCE(on) typ. = 1.60V • 100% of The Parts Tested for ILM • Positive VCE (on) Temperature Co

 1.3. irgp4062d-e.pdf Size:434K _international_rectifier

IRGP4062D
IRGP4062D

IRGB4062DPbF IRGP4062DPbF IRGP4062D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 600V • Low VCE (ON) Trench IGBT Technology • Low switching losses IC = 24A, TC = 100°C • Maximum Junction temperature 175 °C • 5 μS short circuit SOA G tSC 5μs, TJ(max) = 175°C • Square RBSOA • 100% of the parts tested for ILM E

1.4. irgp4062d.pdf Size:434K _international_rectifier

IRGP4062D
IRGP4062D

IRGB4062DPbF IRGP4062DPbF IRGP4062D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 600V • Low VCE (ON) Trench IGBT Technology • Low switching losses IC = 24A, TC = 100°C • Maximum Junction temperature 175 °C • 5 μS short circuit SOA G tSC 5μs, TJ(max) = 175°C • Square RBSOA • 100% of the parts tested for ILM E

Другие IGBT... IRGP20B120UD-E , IRGP20B120U-E , IRGP20B60PD , IRGP30B120KD-E , IRGP30B60KD-E , IRGP35B60PD , IRGP35B60PD-E , IRGP4050 , G20N60B3 , IRGP4063 , IRGP4063D , IRGP4066 , IRGP4066D , IRGP4066D-E , IRGP4066-E , IRGP4068D , IRGP4068D-E .

 

 
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