All IGBT. IRGP4063 Datasheet

 

IRGP4063 IGBT. Datasheet pdf. Equivalent

Type Designator: IRGP4063

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 330

Maximum Collector-Emitter Voltage |Vce|, V: 600

Collector-Emitter saturation Voltage |Vcesat|, V: 2.14

Maximum Collector Current |Ic|, A: 96

Package: TO247

IRGP4063 Transistor Equivalent Substitute - IGBT Cross-Reference Search

IRGP4063 IGBT. Datasheet pdf. Equivalent

Type Designator: IRGP4063

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 330

Maximum Collector-Emitter Voltage |Vce|, V: 600

Collector-Emitter saturation Voltage |Vcesat|, V: 2.14

Maximum Collector Current |Ic|, A: 96

Package: TO247

IRGP4063 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IRGP4063 Datasheet (PDF)

0.1. irgp4063d.pdf Size:782K _international_rectifier

IRGP4063
IRGP4063

PD - 97210IRGP4063DPbFINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEFeatures Low VCE (ON) Trench IGBT Technology CVCES = 600V Low switching losses Maximum Junction temperature 175 CIC = 48A, TC = 100C 5 S short circuit SOA Square RBSOAG tSC 5s, TJ(max) = 175C 100% of the parts tested for 4X rated current (ILM) P

0.2. irgp4063.pdf Size:272K _international_rectifier

IRGP4063
IRGP4063

PD - 97404IRGP4063PbFINSULATED GATE BIPOLAR TRANSISTORIRGP4063-EPbFFeaturesC Low VCE (ON) Trench IGBT TechnologyVCES = 600V Low switching losses Maximum Junction temperature 175 CIC = 48A, TC = 100C 5 S short circuit SOA Square RBSOAGtSC 5s, TJ(max) = 175C 100% of the parts tested for ILM Positive VCE (ON) Temperature co-effic

 0.3. auirgp4063d.pdf Size:337K _international_rectifier

IRGP4063
IRGP4063

AUIRGP4063DAUTOMOTIVE GRADEAUIRGP4063D-EINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECVCES = 600VFeatures Low VCE (ON) Trench IGBT TechnologyIC = 60A, TC = 100C Low switching losses Maximum Junction temperature 175 CG tSC 5s, TJ(max) = 175C 5 S short circuit SOA Square RBSOAEVCE(on) typ. = 1.6V 100% of the

0.4. irgp4063d1.pdf Size:1407K _international_rectifier

IRGP4063
IRGP4063

IRGP4063D1PbF IRGP4063D1-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V CG IC = 60A, TC =100C G tSC 5s, TJ(max) = 175C GE VCE(ON) typ. = 1.65V @ IC = 48A E C C EG G n-channelApplica onsIRGP4063D1PbFIRGP4063D1EPbFIndustrialMotorDriveG C EInvertersUPSGate Collecto

 0.5. irgp4063-e.pdf Size:272K _international_rectifier

IRGP4063
IRGP4063

PD - 97404IRGP4063PbFINSULATED GATE BIPOLAR TRANSISTORIRGP4063-EPbFFeaturesC Low VCE (ON) Trench IGBT TechnologyVCES = 600V Low switching losses Maximum Junction temperature 175 CIC = 48A, TC = 100C 5 S short circuit SOA Square RBSOAGtSC 5s, TJ(max) = 175C 100% of the parts tested for ILM Positive VCE (ON) Temperature co-effic

Datasheet: IRGP20B120U-E , IRGP20B60PD , IRGP30B120KD-E , IRGP30B60KD-E , IRGP35B60PD , IRGP35B60PD-E , IRGP4050 , IRGP4062D , IRGB4062D , IRGP4063D , IRGP4066 , IRGP4066D , IRGP4066D-E , IRGP4066-E , IRGP4068D , IRGP4068D-E , IRGP4069 .

 

 
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