IRGP4063 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Наименование: IRGP4063
Тип управляющего канала: N-Channel
Максимальная рассеиваемая мощность (Pc): 330
Предельно-допустимое напряжение коллектор-эмиттер (Uce): 600
Напряжение насыщения коллектор-эмиттер (Ucesat): 2.14
Максимальный постоянный ток коллектора (Ic): 96
Тип корпуса: TO247
IRGP4063 Datasheet (PDF)
..1. irgp4063.pdf Size:272K _international_rectifier
PD - 97404IRGP4063PbFINSULATED GATE BIPOLAR TRANSISTORIRGP4063-EPbFFeaturesC Low VCE (ON) Trench IGBT TechnologyVCES = 600V Low switching losses Maximum Junction temperature 175 CIC = 48A, TC = 100C 5 S short circuit SOA Square RBSOAGtSC 5s, TJ(max) = 175C 100% of the parts tested for ILM Positive VCE (ON) Temperature co-effic
0.1. irgp4063d.pdf Size:782K _international_rectifier
PD - 97210IRGP4063DPbFINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEFeatures Low VCE (ON) Trench IGBT Technology CVCES = 600V Low switching losses Maximum Junction temperature 175 CIC = 48A, TC = 100C 5 S short circuit SOA Square RBSOAG tSC 5s, TJ(max) = 175C 100% of the parts tested for 4X rated current (ILM) P
0.2. auirgp4063d.pdf Size:337K _international_rectifier
AUIRGP4063DAUTOMOTIVE GRADEAUIRGP4063D-EINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECVCES = 600VFeatures Low VCE (ON) Trench IGBT TechnologyIC = 60A, TC = 100C Low switching losses Maximum Junction temperature 175 CG tSC 5s, TJ(max) = 175C 5 S short circuit SOA Square RBSOAEVCE(on) typ. = 1.6V 100% of the
0.3. irgp4063d1.pdf Size:1407K _international_rectifier
IRGP4063D1PbF IRGP4063D1-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V CG IC = 60A, TC =100C G tSC 5s, TJ(max) = 175C GE VCE(ON) typ. = 1.65V @ IC = 48A E C C EG G n-channelApplica onsIRGP4063D1PbFIRGP4063D1EPbFIndustrialMotorDriveG C EInvertersUPSGate Collecto
0.4. irgp4063-e.pdf Size:272K _international_rectifier
PD - 97404IRGP4063PbFINSULATED GATE BIPOLAR TRANSISTORIRGP4063-EPbFFeaturesC Low VCE (ON) Trench IGBT TechnologyVCES = 600V Low switching losses Maximum Junction temperature 175 CIC = 48A, TC = 100C 5 S short circuit SOA Square RBSOAGtSC 5s, TJ(max) = 175C 100% of the parts tested for ILM Positive VCE (ON) Temperature co-effic
Другие IGBT... IRGP20B120U-E , IRGP20B60PD , IRGP30B120KD-E , IRGP30B60KD-E , IRGP35B60PD , IRGP35B60PD-E , IRGP4050 , IRGP4062D , FGH30S130P , IRGP4063D , IRGP4066 , IRGP4066D , IRGP4066D-E , IRGP4066-E , IRGP4068D , IRGP4068D-E , IRGP4069 .



Список транзисторов
Обновления
IGBT: DGW75N65CTL1 | DGW60N65BTH | DGW50N65CTL1 | DGW50N65CTH | DGW50N65BTH | DGW40N65CTL | DGW40N65CTH | DGW40N65BTH | DGW40N120CTL | DGW40N120CTH0 | DGW40N120CTH