IRGP4066-E IGBT. Datasheet pdf. Equivalent

   Type Designator: IRGP4066-E
   Type: IGBT
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 454
   Maximum Collector-Emitter Voltage |Vce|, V: 600
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 140
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.7
   Maximum G-E Threshold Voltag |VGE(th)|, V: 6.5
   Maximum Junction Temperature (Tj), ℃: 175
   Rise Time (tr), typ, nS: 70
   Collector Capacity (Cc), typ, pF: 245
   Total Gate Charge (Qg), typ, nC: 150
   Package: TO247

IRGP4066-E Transistor Equivalent Substitute - IGBT Cross-Reference Search

IRGP4066-E Datasheet (PDF)

..1. Size:284K international rectifier
irgp4066-e.pdf

PD - 97577IRGP4066PbFINSULATED GATE BIPOLAR TRANSISTORIRGP4066-EPbFFeaturesC Low VCE (ON) Trench IGBT TechnologyVCES = 600V Low Switching Losses Maximum Junction Temperature 175 CIC(Nominal) = 75A 5 S short circuit SOA Square RBSOA GtSC 5s, TJ(max) = 175C 100% of The Parts Tested for ILME Positive VCE (ON) Temperature Coefficient

6.1. Size:331K international rectifier
irgp4066d-e.pdf

PD - 97576IRGP4066DPbFINSULATED GATE BIPOLAR TRANSISTOR WITHIRGP4066D-EPbFULTRAFAST SOFT RECOVERY DIODEFeaturesC Low VCE (ON) Trench IGBT TechnologyVCES = 600V Low Switching Losses Maximum Junction Temperature 175 CIC(Nominal) = 75A 5 S short circuit SOA Square RBSOAG tSC 5s, TJ(max) = 175C 100% of The Parts Tested for ILM Positiv

6.2. Size:331K international rectifier
irgp4066d.pdf

6.3. Size:363K international rectifier
auirgp4066d1.pdf

AUIRGP4066D1AUTOMOTIVE GRADE AUIRGP4066D1-EINSULATED GATE BIPOLAR TRANSISTOR WITHCVCES = 600VULTRAFAST SOFT RECOVERY DIODEFeaturesIC(Nominal) = 75A Low VCE (ON) Trench IGBT Technology Low switching lossesGtSC 5s, TJ(max) = 175C Maximum Junction temperature 175 C 5 S short circuit SOAEVCE(on) typ. = 1.70V Square RBSOAn-channel 100

6.4. Size:284K international rectifier
irgp4066.pdf