IRGP4066-E
- IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Наименование: IRGP4066-E
Тип транзистора: IGBT
Тип управляющего канала: N
Pcⓘ -
Максимальная рассеиваемая мощность: 454
W
|Vce|ⓘ -
Предельно-допустимое напряжение коллектор-эмиттер: 600
V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20
V
|Ic|ⓘ - Максимальный постоянный ток коллектора:
140
A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое:
1.7
V @25℃
|VGEth|ⓘ -
Максимальное пороговое напряжение затвор-эмиттер: 6.5
V
Tjⓘ - Максимальная температура перехода:
175
℃
trⓘ -
Время нарастания типовое: 70
nS
Coesⓘ - Выходная емкость, типовая: 245
pF
Qgⓘ - Общий заряд затвора, typ: 150
nC
Тип корпуса:
TO247
Аналог (замена) для IRGP4066-E
IRGP4066-E
Datasheet (PDF)
..1. Size:284K international rectifier
irgp4066-e.pdf 
PD - 97577IRGP4066PbFINSULATED GATE BIPOLAR TRANSISTORIRGP4066-EPbFFeaturesC Low VCE (ON) Trench IGBT TechnologyVCES = 600V Low Switching Losses Maximum Junction Temperature 175 CIC(Nominal) = 75A 5 S short circuit SOA Square RBSOA GtSC 5s, TJ(max) = 175C 100% of The Parts Tested for ILME Positive VCE (ON) Temperature Coefficient
6.1. Size:331K international rectifier
irgp4066d-e.pdf 
PD - 97576IRGP4066DPbFINSULATED GATE BIPOLAR TRANSISTOR WITHIRGP4066D-EPbFULTRAFAST SOFT RECOVERY DIODEFeaturesC Low VCE (ON) Trench IGBT TechnologyVCES = 600V Low Switching Losses Maximum Junction Temperature 175 CIC(Nominal) = 75A 5 S short circuit SOA Square RBSOAG tSC 5s, TJ(max) = 175C 100% of The Parts Tested for ILM Positiv
6.2. Size:331K international rectifier
irgp4066d.pdf 
PD - 97576IRGP4066DPbFINSULATED GATE BIPOLAR TRANSISTOR WITHIRGP4066D-EPbFULTRAFAST SOFT RECOVERY DIODEFeaturesC Low VCE (ON) Trench IGBT TechnologyVCES = 600V Low Switching Losses Maximum Junction Temperature 175 CIC(Nominal) = 75A 5 S short circuit SOA Square RBSOAG tSC 5s, TJ(max) = 175C 100% of The Parts Tested for ILM Positiv
6.3. Size:363K international rectifier
auirgp4066d1.pdf 
AUIRGP4066D1AUTOMOTIVE GRADE AUIRGP4066D1-EINSULATED GATE BIPOLAR TRANSISTOR WITHCVCES = 600VULTRAFAST SOFT RECOVERY DIODEFeaturesIC(Nominal) = 75A Low VCE (ON) Trench IGBT Technology Low switching lossesGtSC 5s, TJ(max) = 175C Maximum Junction temperature 175 C 5 S short circuit SOAEVCE(on) typ. = 1.70V Square RBSOAn-channel 100
6.4. Size:284K international rectifier
irgp4066.pdf 
PD - 97577IRGP4066PbFINSULATED GATE BIPOLAR TRANSISTORIRGP4066-EPbFFeaturesC Low VCE (ON) Trench IGBT TechnologyVCES = 600V Low Switching Losses Maximum Junction Temperature 175 CIC(Nominal) = 75A 5 S short circuit SOA Square RBSOA GtSC 5s, TJ(max) = 175C 100% of The Parts Tested for ILME Positive VCE (ON) Temperature Coefficient
6.5. Size:315K infineon
irgp4066dpbf irgp4066d-epbf.pdf 
PD - 97576IRGP4066DPbFINSULATED GATE BIPOLAR TRANSISTOR WITHIRGP4066D-EPbFULTRAFAST SOFT RECOVERY DIODEFeaturesC Low VCE (ON) Trench IGBT TechnologyVCES = 600V Low Switching Losses Maximum Junction Temperature 175 CIC(Nominal) = 75A 5 S short circuit SOA Square RBSOAG tSC 5s, TJ(max) = 175C 100% of The Parts Tested for ILM Positiv
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