Справочник IGBT. IRGP4066-E

 

IRGP4066-E - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.

Наименование: IRGP4066-E

Тип транзистора: IGBT

Тип управляющего канала: N-Channel

Максимальная рассеиваемая мощность (Pc), W: 454

Предельно-допустимое напряжение коллектор-эмиттер |Vce|, V: 600

Максимальный постоянный ток коллектора |Ic| @25℃, A: 140

Напряжение насыщения коллектор-эмиттер типовое |VCE(sat)|, V: 2.1

Тип корпуса: TO247AD

Аналог (замена) для IRGP4066-E

 

 

IRGP4066-E Datasheet (PDF)

 ..1. Size:284K  international rectifier
 irgp4066-e.pdf

IRGP4066-E IRGP4066-E

PD - 97577IRGP4066PbFINSULATED GATE BIPOLAR TRANSISTORIRGP4066-EPbFFeaturesC Low VCE (ON) Trench IGBT TechnologyVCES = 600V Low Switching Losses Maximum Junction Temperature 175 CIC(Nominal) = 75A 5 S short circuit SOA Square RBSOA GtSC 5s, TJ(max) = 175C 100% of The Parts Tested for ILME Positive VCE (ON) Temperature Coefficient

 6.1. Size:284K  international rectifier
 irgp4066.pdf

IRGP4066-E IRGP4066-E

PD - 97577IRGP4066PbFINSULATED GATE BIPOLAR TRANSISTORIRGP4066-EPbFFeaturesC Low VCE (ON) Trench IGBT TechnologyVCES = 600V Low Switching Losses Maximum Junction Temperature 175 CIC(Nominal) = 75A 5 S short circuit SOA Square RBSOA GtSC 5s, TJ(max) = 175C 100% of The Parts Tested for ILME Positive VCE (ON) Temperature Coefficient

 6.2. Size:331K  international rectifier
 irgp4066d-e.pdf

IRGP4066-E IRGP4066-E

PD - 97576IRGP4066DPbFINSULATED GATE BIPOLAR TRANSISTOR WITHIRGP4066D-EPbFULTRAFAST SOFT RECOVERY DIODEFeaturesC Low VCE (ON) Trench IGBT TechnologyVCES = 600V Low Switching Losses Maximum Junction Temperature 175 CIC(Nominal) = 75A 5 S short circuit SOA Square RBSOAG tSC 5s, TJ(max) = 175C 100% of The Parts Tested for ILM Positiv

 6.3. Size:363K  international rectifier
 auirgp4066d1.pdf

IRGP4066-E IRGP4066-E

AUIRGP4066D1AUTOMOTIVE GRADE AUIRGP4066D1-EINSULATED GATE BIPOLAR TRANSISTOR WITHCVCES = 600VULTRAFAST SOFT RECOVERY DIODEFeaturesIC(Nominal) = 75A Low VCE (ON) Trench IGBT Technology Low switching lossesGtSC 5s, TJ(max) = 175C Maximum Junction temperature 175 C 5 S short circuit SOAEVCE(on) typ. = 1.70V Square RBSOAn-channel 100

 6.4. Size:331K  international rectifier
 irgp4066d.pdf

IRGP4066-E IRGP4066-E

PD - 97576IRGP4066DPbFINSULATED GATE BIPOLAR TRANSISTOR WITHIRGP4066D-EPbFULTRAFAST SOFT RECOVERY DIODEFeaturesC Low VCE (ON) Trench IGBT TechnologyVCES = 600V Low Switching Losses Maximum Junction Temperature 175 CIC(Nominal) = 75A 5 S short circuit SOA Square RBSOAG tSC 5s, TJ(max) = 175C 100% of The Parts Tested for ILM Positiv

 6.5. Size:315K  infineon
 irgp4066dpbf irgp4066d-epbf.pdf

IRGP4066-E IRGP4066-E

PD - 97576IRGP4066DPbFINSULATED GATE BIPOLAR TRANSISTOR WITHIRGP4066D-EPbFULTRAFAST SOFT RECOVERY DIODEFeaturesC Low VCE (ON) Trench IGBT TechnologyVCES = 600V Low Switching Losses Maximum Junction Temperature 175 CIC(Nominal) = 75A 5 S short circuit SOA Square RBSOAG tSC 5s, TJ(max) = 175C 100% of The Parts Tested for ILM Positiv

Другие IGBT... IRGP35B60PD-E , IRGP4050 , IRGP4062D , IRGP4063 , IRGP4063D , IRGP4066 , IRGP4066D , IRGP4066D-E , IRGP4086 , IRGP4068D , IRGP4068D-E , IRGP4069 , IRGP4069D , IRGP4072D , IRGP4086 , IRGP50B60PD , IRGP50B60PD1 .

 

 
Back to Top