IRGP4069D
IGBT. Datasheet pdf. Equivalent
Type Designator: IRGP4069D
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ -
Maximum Power Dissipation: 268
W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600
V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20
V
|Ic|ⓘ - Maximum Collector Current: 76
A @25℃
|VCEsat|ⓘ -
Collector-Emitter saturation Voltage, typ: 1.6
V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5
V
Tjⓘ -
Maximum Junction Temperature: 175
℃
trⓘ - Rise Time, typ: 33
nS
Coesⓘ - Output Capacitance, typ: 197
pF
Qgⓘ -
Total Gate Charge, typ: 69
nC
Package:
TO247
IRGP4069D
Transistor Equivalent Substitute - IGBT Cross-Reference Search
IRGP4069D
Datasheet (PDF)
..1. Size:309K international rectifier
irgp4069d.pdf 
PD - 97425IRGP4069DPbFINSULATED GATE BIPOLAR TRANSISTOR WITHIRGP4069D-EPbFULTRAFAST SOFT RECOVERY DIODEFeaturesC Low VCE (ON) Trench IGBT TechnologyVCES = 600V Low Switching Losses Maximum Junction Temperature 175 CIC(Nominal) = 35A 5 S short circuit SOA Square RBSOAG tSC 5s, TJ(max) = 175C 100% of The Parts Tested for ILM Positiv
0.1. Size:309K international rectifier
irgp4069d-e.pdf
PD - 97425IRGP4069DPbFINSULATED GATE BIPOLAR TRANSISTOR WITHIRGP4069D-EPbFULTRAFAST SOFT RECOVERY DIODEFeaturesC Low VCE (ON) Trench IGBT TechnologyVCES = 600V Low Switching Losses Maximum Junction Temperature 175 CIC(Nominal) = 35A 5 S short circuit SOA Square RBSOAG tSC 5s, TJ(max) = 175C 100% of The Parts Tested for ILM Positiv
0.2. Size:295K infineon
irgp4069dpbf.pdf
PD - 97425IRGP4069DPbFINSULATED GATE BIPOLAR TRANSISTOR WITHIRGP4069D-EPbFULTRAFAST SOFT RECOVERY DIODEFeaturesC Low VCE (ON) Trench IGBT TechnologyVCES = 600V Low Switching Losses Maximum Junction Temperature 175 CIC(Nominal) = 35A 5 S short circuit SOA Square RBSOAG tSC 5s, TJ(max) = 175C 100% of The Parts Tested for ILM Positiv
6.1. Size:268K international rectifier
irgp4069.pdf
PD - 97426IRGP4069PbFINSULATED GATE BIPOLAR TRANSISTORIRGP4069-EPbFFeaturesC Low VCE (ON) Trench IGBT TechnologyVCES = 600V Low Switching Losses Maximum Junction Temperature 175 CIC(Nominal) = 35A 5 S short circuit SOA Square RBSOA GtSC 5s, TJ(max) = 175C 100% of The Parts Tested for ILME Positive VCE (ON) Temperature Coefficient
6.2. Size:268K international rectifier
irgp4069-e.pdf
PD - 97426IRGP4069PbFINSULATED GATE BIPOLAR TRANSISTORIRGP4069-EPbFFeaturesC Low VCE (ON) Trench IGBT TechnologyVCES = 600V Low Switching Losses Maximum Junction Temperature 175 CIC(Nominal) = 35A 5 S short circuit SOA Square RBSOA GtSC 5s, TJ(max) = 175C 100% of The Parts Tested for ILME Positive VCE (ON) Temperature Coefficient
Datasheet: IRGP4063D
, IRGP4066
, IRGP4066D
, IRGP4066D-E
, IRGP4066-E
, IRGP4068D
, IRGP4068D-E
, IRGP4069
, GT60N321
, IRGP4072D
, IRGP4086
, IRGP50B60PD
, IRGP50B60PD1
, IRGP50B60PD1-EP
, IRGPS40B120U
, IRGPS40B120UD
, IRGPS60B120KD
.
