All IGBT. IRGP4069D Datasheet

 

IRGP4069D IGBT. Datasheet pdf. Equivalent


   Type Designator: IRGP4069D
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 268
   Maximum Collector-Emitter Voltage |Vce|, V: 600
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 76
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.6
   Maximum G-E Threshold Voltag |VGE(th)|, V: 6.5
   Maximum Junction Temperature (Tj), ℃: 175
   Rise Time (tr), typ, nS: 33
   Collector Capacity (Cc), typ, pF: 197
   Total Gate Charge (Qg), typ, nC: 69
   Package: TO247

 IRGP4069D Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IRGP4069D Datasheet (PDF)

 ..1. Size:309K  international rectifier
 irgp4069d.pdf

IRGP4069D IRGP4069D

PD - 97425IRGP4069DPbFINSULATED GATE BIPOLAR TRANSISTOR WITHIRGP4069D-EPbFULTRAFAST SOFT RECOVERY DIODEFeaturesC Low VCE (ON) Trench IGBT TechnologyVCES = 600V Low Switching Losses Maximum Junction Temperature 175 CIC(Nominal) = 35A 5 S short circuit SOA Square RBSOAG tSC 5s, TJ(max) = 175C 100% of The Parts Tested for ILM Positiv

 0.1. Size:309K  international rectifier
 irgp4069d-e.pdf

IRGP4069D IRGP4069D

PD - 97425IRGP4069DPbFINSULATED GATE BIPOLAR TRANSISTOR WITHIRGP4069D-EPbFULTRAFAST SOFT RECOVERY DIODEFeaturesC Low VCE (ON) Trench IGBT TechnologyVCES = 600V Low Switching Losses Maximum Junction Temperature 175 CIC(Nominal) = 35A 5 S short circuit SOA Square RBSOAG tSC 5s, TJ(max) = 175C 100% of The Parts Tested for ILM Positiv

 0.2. Size:295K  infineon
 irgp4069dpbf.pdf

IRGP4069D IRGP4069D

PD - 97425IRGP4069DPbFINSULATED GATE BIPOLAR TRANSISTOR WITHIRGP4069D-EPbFULTRAFAST SOFT RECOVERY DIODEFeaturesC Low VCE (ON) Trench IGBT TechnologyVCES = 600V Low Switching Losses Maximum Junction Temperature 175 CIC(Nominal) = 35A 5 S short circuit SOA Square RBSOAG tSC 5s, TJ(max) = 175C 100% of The Parts Tested for ILM Positiv

 6.1. Size:268K  international rectifier
 irgp4069.pdf

IRGP4069D IRGP4069D

PD - 97426IRGP4069PbFINSULATED GATE BIPOLAR TRANSISTORIRGP4069-EPbFFeaturesC Low VCE (ON) Trench IGBT TechnologyVCES = 600V Low Switching Losses Maximum Junction Temperature 175 CIC(Nominal) = 35A 5 S short circuit SOA Square RBSOA GtSC 5s, TJ(max) = 175C 100% of The Parts Tested for ILME Positive VCE (ON) Temperature Coefficient

 6.2. Size:268K  international rectifier
 irgp4069-e.pdf

IRGP4069D IRGP4069D

PD - 97426IRGP4069PbFINSULATED GATE BIPOLAR TRANSISTORIRGP4069-EPbFFeaturesC Low VCE (ON) Trench IGBT TechnologyVCES = 600V Low Switching Losses Maximum Junction Temperature 175 CIC(Nominal) = 35A 5 S short circuit SOA Square RBSOA GtSC 5s, TJ(max) = 175C 100% of The Parts Tested for ILME Positive VCE (ON) Temperature Coefficient

Datasheet: IRGP4063D , IRGP4066 , IRGP4066D , IRGP4066D-E , IRGP4066-E , IRGP4068D , IRGP4068D-E , IRGP4069 , IXRP15N120 , IRGP4072D , IRGP4086 , IRGP50B60PD , IRGP50B60PD1 , IRGP50B60PD1-EP , IRGPS40B120U , IRGPS40B120UD , IRGPS60B120KD .

 

 
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