All IGBT. IRGR3B60KD2 Datasheet

 

IRGR3B60KD2 IGBT. Datasheet pdf. Equivalent


   Type Designator: IRGR3B60KD2
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 52 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 7.8 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 15 nS
   Coesⓘ - Output Capacitance, typ: 23 pF
   Qgⓘ - Total Gate Charge, typ: 13 nC
   Package: DPAK

 IRGR3B60KD2 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IRGR3B60KD2 Datasheet (PDF)

 ..1. Size:260K  international rectifier
 irgr3b60kd2.pdf

IRGR3B60KD2 IRGR3B60KD2

PD - 94601AIRGR3B60KD2INSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECVCES = 600VFeatures Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF.IC = 4.2A, TC=100C 10s Short Circuit Capability. Square RBSOA.G Ultrasoft Diode Reverse Recovery Characteristics. tsc > 10s, TJ=150C Positive VCE (on) Temperature Coefficie

Datasheet: IRGP4072D , IRGP4086 , IRGP50B60PD , IRGP50B60PD1 , IRGP50B60PD1-EP , IRGPS40B120U , IRGPS40B120UD , IRGPS60B120KD , TGAN40N60FD , IRGS10B60KD , IRGS15B60K , IRGS15B60KD , IRGS30B60K , IRGS4056D , IRGS4062D , IRGS4086 , IRGS4B60K .

 

 
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