All IGBT. IRGR3B60KD2 Datasheet

 

IRGR3B60KD2 IGBT. Datasheet pdf. Equivalent


   Type Designator: IRGR3B60KD2
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 52
   Maximum Collector-Emitter Voltage |Vce|, V: 600
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 7.8
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.9
   Maximum G-E Threshold Voltag |VGE(th)|, V: 5.5
   Maximum Junction Temperature (Tj), ℃: 150
   Rise Time (tr), typ, nS: 15
   Collector Capacity (Cc), typ, pF: 23
   Total Gate Charge (Qg), typ, nC: 13
   Package: DPAK

 IRGR3B60KD2 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IRGR3B60KD2 Datasheet (PDF)

 ..1. Size:260K  international rectifier
 irgr3b60kd2.pdf

IRGR3B60KD2 IRGR3B60KD2

PD - 94601AIRGR3B60KD2INSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECVCES = 600VFeatures Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF.IC = 4.2A, TC=100C 10s Short Circuit Capability. Square RBSOA.G Ultrasoft Diode Reverse Recovery Characteristics. tsc > 10s, TJ=150C Positive VCE (on) Temperature Coefficie

Datasheet: IRGP4072D , IRGP4086 , IRGP50B60PD , IRGP50B60PD1 , IRGP50B60PD1-EP , IRGPS40B120U , IRGPS40B120UD , IRGPS60B120KD , DG40F12T2 , IRGS10B60KD , IRGS15B60K , IRGS15B60KD , IRGS30B60K , IRGS4056D , IRGS4062D , IRGS4086 , IRGS4B60K .

 

 
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