IRGR3B60KD2 Datasheet and Replacement
Type Designator: IRGR3B60KD2
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 52 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 7.8 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.5 V
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 15 nS
Coesⓘ - Output Capacitance, typ: 23 pF
Qg ⓘ - Total Gate Charge, typ: 13 nC
Package: DPAK
IRGR3B60KD2 substitution
IRGR3B60KD2 Datasheet (PDF)
irgr3b60kd2.pdf
PD - 94601AIRGR3B60KD2INSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECVCES = 600VFeatures Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF.IC = 4.2A, TC=100C 10s Short Circuit Capability. Square RBSOA.G Ultrasoft Diode Reverse Recovery Characteristics. tsc > 10s, TJ=150C Positive VCE (on) Temperature Coefficie
Datasheet: IRGP4072D , IRGP4086 , IRGP50B60PD , IRGP50B60PD1 , IRGP50B60PD1-EP , IRGPS40B120U , IRGPS40B120UD , IRGPS60B120KD , BT15T120ANF , IRGS10B60KD , IRGS15B60K , IRGS15B60KD , IRGS30B60K , IRGS4056D , IRGS4062D , IRGS4086 , IRGS4B60K .
History: HGTG40N60A4
Keywords - IRGR3B60KD2 transistor datasheet
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History: HGTG40N60A4
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