All IGBT. IRGR3B60KD2 Datasheet

 

IRGR3B60KD2 Datasheet and Replacement


   Type Designator: IRGR3B60KD2
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 52 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 7.8 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 15 nS
   Coesⓘ - Output Capacitance, typ: 23 pF
   Package: DPAK
      - IGBT Cross-Reference

 

IRGR3B60KD2 Datasheet (PDF)

 ..1. Size:260K  international rectifier
 irgr3b60kd2.pdf pdf_icon

IRGR3B60KD2

PD - 94601AIRGR3B60KD2INSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECVCES = 600VFeatures Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF.IC = 4.2A, TC=100C 10s Short Circuit Capability. Square RBSOA.G Ultrasoft Diode Reverse Recovery Characteristics. tsc > 10s, TJ=150C Positive VCE (on) Temperature Coefficie

Datasheet: IRGP4072D , IRGP4086 , IRGP50B60PD , IRGP50B60PD1 , IRGP50B60PD1-EP , IRGPS40B120U , IRGPS40B120UD , IRGPS60B120KD , RJP6065DPM , IRGS10B60KD , IRGS15B60K , IRGS15B60KD , IRGS30B60K , IRGS4056D , IRGS4062D , IRGS4086 , IRGS4B60K .

History: F3L30R06W1E3_B11 | HGTG40N60A4 | BRG25N120D | FGH20N60UFD | GT45G128 | IRG4PH40UD | BT50N60ANF

Keywords - IRGR3B60KD2 transistor datasheet

 IRGR3B60KD2 cross reference
 IRGR3B60KD2 equivalent finder
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