All IGBT. GT5G102LB Datasheet

 

GT5G102LB Datasheet and Replacement


   Type Designator: GT5G102LB
   Type: IGBT + Built-in Zener Diodes
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 20 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 5 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 5 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 700 nS
   Package: IPAK
 

 GT5G102LB substitution

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GT5G102LB Datasheet (PDF)

 7.1. Size:79K  toshiba
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GT5G102LB

GT5G102 TOSHIBA Insulated Gate Bipolar Transistor Preliminary Silicon N Channel IGBT GT5G102 Strobe Flash Applications Unit: mm 3rd Generation High input impedance Low saturation voltage : V = 8 V (max) (I = 130 A) CE (sat) C Enhancement-mode 12 V gate drive Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-emitte

 8.1. Size:134K  toshiba
 gt5g101.pdf pdf_icon

GT5G102LB

 8.2. Size:369K  toshiba
 gt5g103.pdf pdf_icon

GT5G102LB

GT5G103 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT5G103 STROBE FLASH APPLICATIONS Unit: mm 3rd Generation (A) High Input Impedance Low Saturation Voltage : VCE (sat) = 8 V (Max.) (IC = 130 A) Enhancement-Mode 4.5 V Gate Drive ABSOLUTE MAXIMUM RATINGS (Ta = 25C) CHARACTERISTIC SYMBOL RATING UNIT (B) Collector-Emitter Voltage VCES 40

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Datasheet: GT50J322 , GT50L101 , GT50M101 , GT50Q101 , GT50S101 , GT50T101 , GT5G101 , GT5G102 , GT30F131 , GT5G103 , GT5G103LB , GT60J101 , GT60M101 , GT60M102 , GT60M103 , GT60M301 , GT60M302 .

Keywords - GT5G102LB transistor datasheet

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