RJH1CD5DPQ-E0 Datasheet and Replacement

Preliminary Datasheet RJH1CD5DPQ-E0 R07DS0517EJ05001200V - 20A - IGBT Rev.5.00Application: Inverter Jun 12, 2012Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.0 V typ. (at IC = 20 A, VGE = 15 V, Ta = 25C) Built-in fast recovery diode (trr = 180 ns typ.) in one package Trench gate and thin wa

Preliminary DatasheetRJH1CD5DPQ-A0 R07DS0451EJ01001200 V - 15 A - IGBT Rev.1.00Application: Inverter Jul 22, 2011Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.2 V typ. (at IC = 15 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (trr = 100 ns typ.) in one package Trench gate and thin wa

Preliminary DatasheetRJH1CD5DPQ-E0 R07DS0517EJ03001200 V - 20 A - IGBT Rev.3.00Application: Inverter Nov 21, 2011Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.0 V typ. (at IC = 20 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (trr = 100 ns typ.) in one package Trench gate and thin wa

Preliminary DatasheetRJH1CD5DPQ-A0 R07DS0451EJ01001200 V - 15 A - IGBT Rev.1.00Application: Inverter Jul 22, 2011Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.2 V typ. (at IC = 15 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (trr = 100 ns typ.) in one package Trench gate and thin wa