RJH1CD5DPQ-E0 IGBT. Datasheet pdf. Equivalent
Type Designator: RJH1CD5DPQ-E0
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 245 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic|ⓘ - Maximum Collector Current: 40 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 20 nS
Coesⓘ - Output Capacitance, typ: 70 pF
Qgⓘ - Total Gate Charge, typ: 73 nC
Package: TO247
RJH1CD5DPQ-E0 Transistor Equivalent Substitute - IGBT Cross-Reference Search
RJH1CD5DPQ-E0 Datasheet (PDF)
rjh1cd5dpq-e0.pdf
Preliminary Datasheet RJH1CD5DPQ-E0 R07DS0517EJ05001200V - 20A - IGBT Rev.5.00Application: Inverter Jun 12, 2012Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.0 V typ. (at IC = 20 A, VGE = 15 V, Ta = 25C) Built-in fast recovery diode (trr = 180 ns typ.) in one package Trench gate and thin wa
rjh1cd5dpq-a0.pdf
Preliminary DatasheetRJH1CD5DPQ-A0 R07DS0451EJ01001200 V - 15 A - IGBT Rev.1.00Application: Inverter Jul 22, 2011Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.2 V typ. (at IC = 15 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (trr = 100 ns typ.) in one package Trench gate and thin wa
r07ds0517ej rjh1cd5dpq.pdf
Preliminary DatasheetRJH1CD5DPQ-E0 R07DS0517EJ03001200 V - 20 A - IGBT Rev.3.00Application: Inverter Nov 21, 2011Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.0 V typ. (at IC = 20 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (trr = 100 ns typ.) in one package Trench gate and thin wa
r07ds0451ej rjh1cd5dpq.pdf
Preliminary DatasheetRJH1CD5DPQ-A0 R07DS0451EJ01001200 V - 15 A - IGBT Rev.1.00Application: Inverter Jul 22, 2011Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.2 V typ. (at IC = 15 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (trr = 100 ns typ.) in one package Trench gate and thin wa
Datasheet: IRGSL10B60KD , IRGSL14C40L , IRGSL15B60KD , IRGSL30B60K , IRGSL4062D , IRGSL4B60KD1 , IRGSL6B60KD , RJH1CD5DPQ-A0 , IHW20N120R3 , RJH1CD6DPQ-A0 , RJH1CD6DPQ-E0 , RJH1CD7DPQ-A0 , RJH1CD7DPQ-E0 , RJH1CM5DPQ-E0 , RJH1CM6DPQ-E0 , RJH1CM7DPQ-E0 , RJH1CV5DPQ-E0 .
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