All IGBT. RJH1CD6DPQ-A0 Datasheet

 

RJH1CD6DPQ-A0 IGBT. Datasheet pdf. Equivalent


   Type Designator: RJH1CD6DPQ-A0
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 297.6 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 40 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 15 nS
   Coesⓘ - Output Capacitance, typ: 60 pF
   Package: TO247A

 RJH1CD6DPQ-A0 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

RJH1CD6DPQ-A0 Datasheet (PDF)

 ..1. Size:53K  1
 rjh1cd6dpq-a0.pdf

RJH1CD6DPQ-A0 RJH1CD6DPQ-A0

Preliminary DatasheetRJH1CD6DPQ-A0 R07DS0452EJ01001200 V - 20 A - IGBT Rev.1.00Application: Inverter Jul 22, 2011Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.2 V typ. (at IC = 20 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (trr = 100 ns typ.) in one package Trench gate and thin wa

 3.1. Size:98K  renesas
 rjh1cd6dpq-e0.pdf

RJH1CD6DPQ-A0 RJH1CD6DPQ-A0

Preliminary Datasheet RJH1CD6DPQ-E0 R07DS0518EJ05001200V - 25A - IGBT Rev.5.00Application: Inverter Jun 12, 2012Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.0 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25C) Built-in fast recovery diode (trr = 170 ns typ.) in one package Trench gate and thin wa

 4.1. Size:53K  renesas
 r07ds0452ej rjh1cd6dpq.pdf

RJH1CD6DPQ-A0 RJH1CD6DPQ-A0

Preliminary DatasheetRJH1CD6DPQ-A0 R07DS0452EJ01001200 V - 20 A - IGBT Rev.1.00Application: Inverter Jul 22, 2011Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.2 V typ. (at IC = 20 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (trr = 100 ns typ.) in one package Trench gate and thin wa

 4.2. Size:53K  renesas
 r07ds0518ej rjh1cd6dpq.pdf

RJH1CD6DPQ-A0 RJH1CD6DPQ-A0

Preliminary DatasheetRJH1CD6DPQ-E0 R07DS0518EJ03001200 V - 25 A - IGBT Rev.3.00Application: Inverter Nov 21, 2011Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.0 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (trr = 100 ns typ.) in one package Trench gate and thin wa

Datasheet: IRGSL14C40L , IRGSL15B60KD , IRGSL30B60K , IRGSL4062D , IRGSL4B60KD1 , IRGSL6B60KD , RJH1CD5DPQ-A0 , RJH1CD5DPQ-E0 , IKW75N60T , RJH1CD6DPQ-E0 , RJH1CD7DPQ-A0 , RJH1CD7DPQ-E0 , RJH1CM5DPQ-E0 , RJH1CM6DPQ-E0 , RJH1CM7DPQ-E0 , RJH1CV5DPQ-E0 , RJH1CV6DPQ-E0 .

 

 
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