RJH60F6DPQ-A0 Datasheet. Specs and Replacement

Type Designator: RJH60F6DPQ-A0  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 297.6 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 85 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.35 V @25℃

tr ⓘ - Rise Time, typ: 80 nS

Coesⓘ - Output Capacitance, typ: 150 pF

Package: TO247A

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RJH60F6DPQ-A0 datasheet

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RJH60F6DPQ-A0

Preliminary Datasheet RJH60F6DPQ-A0 R07DS0327EJ0200 600 V - 45 A - IGBT Rev.2.00 High Speed Power Switching Jul 22, 2011 Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 74 ns typ. (a... See More ⇒

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RJH60F6DPQ-A0

Preliminary Datasheet RJH60F6DPQ-A0 R07DS0327EJ0200 600 V - 45 A - IGBT Rev.2.00 High Speed Power Switching Jul 22, 2011 Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 74 ns typ. (a... See More ⇒

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RJH60F6DPQ-A0

Preliminary Datasheet RJH60F6DPK R07DS0236EJ0200 (Previous REJ03G1940-0100) Silicon N Channel IGBT Rev.2.00 High Speed Power Switching Nov 30, 2010 Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed s... See More ⇒

 5.2. Size:83K  renesas
 rjh60f6dpk.pdf pdf_icon

RJH60F6DPQ-A0

Preliminary Datasheet RJH60F6DPK R07DS0236EJ0200 (Previous REJ03G1940-0100) Silicon N Channel IGBT Rev.2.00 High Speed Power Switching Nov 30, 2010 Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed s... See More ⇒

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Specs: RJH60D6DPM, RJH60D7ADPK, RJH60D7DPM, RJH60F0DPQ-A0, RJH60F3DPK, RJH60F3DPQ-A0, RJH60F4DPQ-A0, RJH60F5DPQ-A0, IRG4PC50U, RJH60F7DPQ-A0, RJH60M0DPQ-A0, RJH60M1DPE, RJH60M1DPP-M0, RJH60M2DPE, RJH60M2DPP-M0, RJH60M3DPE, RJH60M3DPP-M0

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