RJH60F6DPQ-A0
IGBT. Datasheet pdf. Equivalent
Type Designator: RJH60F6DPQ-A0
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ -
Maximum Power Dissipation: 297.6
W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600
V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30
V
|Ic|ⓘ - Maximum Collector Current: 85
A @25℃
|VCEsat|ⓘ -
Collector-Emitter saturation Voltage, typ: 1.35
V @25℃
Tjⓘ -
Maximum Junction Temperature: 150
℃
trⓘ - Rise Time, typ: 80
nS
Coesⓘ - Output Capacitance, typ: 150
pF
Package: TO247A
RJH60F6DPQ-A0
Transistor Equivalent Substitute - IGBT Cross-Reference Search
RJH60F6DPQ-A0
Datasheet (PDF)
..1. Size:87K renesas
rjh60f6dpq-a0.pdf 
Preliminary Datasheet RJH60F6DPQ-A0 R07DS0327EJ0200600 V - 45 A - IGBT Rev.2.00High Speed Power Switching Jul 22, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 74 ns typ. (a
4.1. Size:90K renesas
r07ds0327ej rjh60f6dpq.pdf
Preliminary Datasheet RJH60F6DPQ-A0 R07DS0327EJ0200600 V - 45 A - IGBT Rev.2.00High Speed Power Switching Jul 22, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 74 ns typ. (a
5.1. Size:86K renesas
r07ds0236ej rjh60f6dpk.pdf
Preliminary Datasheet RJH60F6DPK R07DS0236EJ0200(Previous: REJ03G1940-0100)Silicon N Channel IGBT Rev.2.00High Speed Power Switching Nov 30, 2010Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed s
5.2. Size:83K renesas
rjh60f6dpk.pdf
Preliminary Datasheet RJH60F6DPK R07DS0236EJ0200(Previous: REJ03G1940-0100)Silicon N Channel IGBT Rev.2.00High Speed Power Switching Nov 30, 2010Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed s
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