RJH60F7DPQ-A0 Datasheet. Specs and Replacement

Type Designator: RJH60F7DPQ-A0  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 328.9 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 90 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.35 V @25℃

tr ⓘ - Rise Time, typ: 81 nS

Coesⓘ - Output Capacitance, typ: 198 pF

Package: TO247A

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RJH60F7DPQ-A0 datasheet

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RJH60F7DPQ-A0

Preliminary Datasheet B0 RJH60F7DPQ-A0 R07DS0328EJ0200 600 V - 50 A - IGBT Rev.2.00 High Speed Power Switching Jul 22, 2011 B1 Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 74 ns... See More ⇒

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RJH60F7DPQ-A0

Preliminary Datasheet B0 RJH60F7DPQ-A0 R07DS0328EJ0200 600 V - 50 A - IGBT Rev.2.00 High Speed Power Switching Jul 22, 2011 B1 Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 74 ns... See More ⇒

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 rjh60f7adpk.pdf pdf_icon

RJH60F7DPQ-A0

Preliminary Datasheet RJH60F7ADPK R07DS0237EJ0300 (Previous REJ03G1837-0200) Silicon N Channel IGBT Rev.3.00 High Speed Power Switching Jan 05, 2011 Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed ... See More ⇒

 7.2. Size:85K  renesas
 r07ds0237ej rjh60f7adp.pdf pdf_icon

RJH60F7DPQ-A0

Preliminary Datasheet RJH60F7ADPK R07DS0237EJ0300 (Previous REJ03G1837-0200) Silicon N Channel IGBT Rev.3.00 High Speed Power Switching Jan 05, 2011 Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed ... See More ⇒

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Specs: RJH60D7ADPK, RJH60D7DPM, RJH60F0DPQ-A0, RJH60F3DPK, RJH60F3DPQ-A0, RJH60F4DPQ-A0, RJH60F5DPQ-A0, RJH60F6DPQ-A0, FGH60N60SFD, RJH60M0DPQ-A0, RJH60M1DPE, RJH60M1DPP-M0, RJH60M2DPE, RJH60M2DPP-M0, RJH60M3DPE, RJH60M3DPP-M0, RJH60M3DPQ-A0

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