RJH60F7DPQ-A0 Specs and Replacement
Type Designator: RJH60F7DPQ-A0
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 328.9 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic| ⓘ - Maximum Collector Current: 90 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.35 V @25℃
tr ⓘ - Rise Time, typ: 81 nS
Coesⓘ - Output Capacitance, typ: 198 pF
Package: TO247A RJH60F7DPQ-A0 Substitution - IGBT ⓘ Cross-Reference Search
RJH60F7DPQ-A0 datasheet
rjh60f7dpq-a0.pdf
Preliminary Datasheet B0 RJH60F7DPQ-A0 R07DS0328EJ0200 600 V - 50 A - IGBT Rev.2.00 High Speed Power Switching Jul 22, 2011 B1 Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 74 ns... See More ⇒
r07ds0328ej rjh60f7dpq.pdf
Preliminary Datasheet B0 RJH60F7DPQ-A0 R07DS0328EJ0200 600 V - 50 A - IGBT Rev.2.00 High Speed Power Switching Jul 22, 2011 B1 Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 74 ns... See More ⇒
rjh60f7adpk.pdf
Preliminary Datasheet RJH60F7ADPK R07DS0237EJ0300 (Previous REJ03G1837-0200) Silicon N Channel IGBT Rev.3.00 High Speed Power Switching Jan 05, 2011 Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed ... See More ⇒
r07ds0237ej rjh60f7adp.pdf
Preliminary Datasheet RJH60F7ADPK R07DS0237EJ0300 (Previous REJ03G1837-0200) Silicon N Channel IGBT Rev.3.00 High Speed Power Switching Jan 05, 2011 Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed ... See More ⇒
Specs: RJH60D7ADPK , RJH60D7DPM , RJH60F0DPQ-A0 , RJH60F3DPK , RJH60F3DPQ-A0 , RJH60F4DPQ-A0 , RJH60F5DPQ-A0 , RJH60F6DPQ-A0 , JT075N065WED , RJH60M0DPQ-A0 , RJH60M1DPE , RJH60M1DPP-M0 , RJH60M2DPE , RJH60M2DPP-M0 , RJH60M3DPE , RJH60M3DPP-M0 , RJH60M3DPQ-A0 .
History: RJP60F5DPM
Keywords - RJH60F7DPQ-A0 transistor spec
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History: RJP60F5DPM
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