All IGBT. RJH60F7DPQ-A0 Datasheet

 

RJH60F7DPQ-A0 IGBT. Datasheet pdf. Equivalent


   Type Designator: RJH60F7DPQ-A0
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 328.9 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 90 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.35 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 81 nS
   Coesⓘ - Output Capacitance, typ: 198 pF
   Package: TO247A

 RJH60F7DPQ-A0 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

RJH60F7DPQ-A0 Datasheet (PDF)

 ..1. Size:86K  renesas
 rjh60f7dpq-a0.pdf

RJH60F7DPQ-A0 RJH60F7DPQ-A0

Preliminary Datasheet B0RJH60F7DPQ-A0 R07DS0328EJ0200600 V - 50 A - IGBT Rev.2.00High Speed Power Switching Jul 22, 2011B1Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 74 ns

 4.1. Size:89K  renesas
 r07ds0328ej rjh60f7dpq.pdf

RJH60F7DPQ-A0 RJH60F7DPQ-A0

Preliminary Datasheet B0RJH60F7DPQ-A0 R07DS0328EJ0200600 V - 50 A - IGBT Rev.2.00High Speed Power Switching Jul 22, 2011B1Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 74 ns

 7.1. Size:82K  renesas
 rjh60f7adpk.pdf

RJH60F7DPQ-A0 RJH60F7DPQ-A0

Preliminary Datasheet RJH60F7ADPK R07DS0237EJ0300(Previous: REJ03G1837-0200)Silicon N Channel IGBT Rev.3.00High Speed Power Switching Jan 05, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed

 7.2. Size:85K  renesas
 r07ds0237ej rjh60f7adp.pdf

RJH60F7DPQ-A0 RJH60F7DPQ-A0

Preliminary Datasheet RJH60F7ADPK R07DS0237EJ0300(Previous: REJ03G1837-0200)Silicon N Channel IGBT Rev.3.00High Speed Power Switching Jan 05, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed

 7.3. Size:93K  renesas
 rjh60f7bdpq-a0.pdf

RJH60F7DPQ-A0 RJH60F7DPQ-A0

Preliminary Datasheet RJH60F7BDPQ-A0 R07DS0633EJ0100600V - 50A - IGBT Rev.1.00High Speed Power Switching Feb 17, 2012Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 74 ns typ. (at

Datasheet: RJH60D7ADPK , RJH60D7DPM , RJH60F0DPQ-A0 , RJH60F3DPK , RJH60F3DPQ-A0 , RJH60F4DPQ-A0 , RJH60F5DPQ-A0 , RJH60F6DPQ-A0 , IKW50N60H3 , RJH60M0DPQ-A0 , RJH60M1DPE , RJH60M1DPP-M0 , RJH60M2DPE , RJH60M2DPP-M0 , RJH60M3DPE , RJH60M3DPP-M0 , RJH60M3DPQ-A0 .

 

 
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