RJH60M1DPP-M0 Datasheet. Specs and Replacement

Type Designator: RJH60M1DPP-M0  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 30 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 16 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃

tr ⓘ - Rise Time, typ: 12 nS

Coesⓘ - Output Capacitance, typ: 25 pF

Package: TO220F

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RJH60M1DPP-M0 datasheet

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RJH60M1DPP-M0

Preliminary Datasheet RJH60M1DPP-M0 R07DS0528EJ0300 600V - 8A - IGBT Rev.3.00 Application Inverter May 25, 2012 Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 8 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (75 ns typ.) in one package Trench gate and thin wafer techno... See More ⇒

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RJH60M1DPP-M0

Preliminary Datasheet RJH60M1DPP-M0 R07DS0528EJ0100 600 V - 8 A - IGBT Rev.1.00 Application Inverter Sep 02, 2011 Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 8 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer techn... See More ⇒

 5.1. Size:53K  renesas
 r07ds0529ej rjh60m1dpe.pdf pdf_icon

RJH60M1DPP-M0

Preliminary Datasheet RJH60M1DPE R07DS0529EJ0100 600 V - 8 A - IGBT Rev.1.00 Application Inverter Sep 02, 2011 Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 8 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer technolo... See More ⇒

 5.2. Size:97K  renesas
 rjh60m1dpe.pdf pdf_icon

RJH60M1DPP-M0

Preliminary Datasheet RJH60M1DPE R07DS0529EJ0300 600V - 8A - IGBT Rev.3.00 Application Inverter May 25, 2012 Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 8 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer technolo... See More ⇒

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Specs: RJH60F3DPK, RJH60F3DPQ-A0, RJH60F4DPQ-A0, RJH60F5DPQ-A0, RJH60F6DPQ-A0, RJH60F7DPQ-A0, RJH60M0DPQ-A0, RJH60M1DPE, GT45F122, RJH60M2DPE, RJH60M2DPP-M0, RJH60M3DPE, RJH60M3DPP-M0, RJH60M3DPQ-A0, RJH60M5DPQ-A0, RJH60M6DPQ-A0, RJH60M7DPQ-A0

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