All IGBT. RJH60M1DPP-M0 Datasheet

 

RJH60M1DPP-M0 IGBT. Datasheet pdf. Equivalent

Type Designator: RJH60M1DPP-M0

Type of IGBT Channel: N-Channel

Maximum Collector-Emitter Voltage |Vce|, V: 600V

Collector-Emitter saturation Voltage |Vcesat|, V: 1.9V

Maximum Collector Current |Ic|, A: 16A

Rise Time, nS: 80

Package: TO220FL

RJH60M1DPP-M0 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

RJH60M1DPP-M0 Datasheet (PDF)

1.1. r07ds0528ej rjh60m1dpp.pdf Size:54K _renesas

RJH60M1DPP-M0
RJH60M1DPP-M0

Preliminary Datasheet RJH60M1DPP-M0 R07DS0528EJ0100 600 V - 8 A - IGBT Rev.1.00 Application: Inverter Sep 02, 2011 Features ? Short circuit withstand time (8 ?s typ.) ? Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 8 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode (100 ns typ.) in one package ? Trench gate and thin wafer technology ? High

1.2. r07ds0529ej rjh60m1dpe.pdf Size:53K _renesas

RJH60M1DPP-M0
RJH60M1DPP-M0

Preliminary Datasheet RJH60M1DPE R07DS0529EJ0100 600 V - 8 A - IGBT Rev.1.00 Application: Inverter Sep 02, 2011 Features ? Short circuit withstand time (8 ?s typ.) ? Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 8 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode (100 ns typ.) in one package ? Trench gate and thin wafer technology ? High sp

 1.3. rjh60m1dpp-m0.pdf Size:102K _igbt

RJH60M1DPP-M0
RJH60M1DPP-M0

 Preliminary Datasheet RJH60M1DPP-M0 R07DS0528EJ0300 600V - 8A - IGBT Rev.3.00 Application: Inverter May 25, 2012 Features  Short circuit withstand time (8 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 8 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (75 ns typ.) in one package  Trench gate and thin wafer techno

1.4. rjh60m1dpe.pdf Size:97K _igbt

RJH60M1DPP-M0
RJH60M1DPP-M0

 Preliminary Datasheet RJH60M1DPE R07DS0529EJ0300 600V - 8A - IGBT Rev.3.00 Application: Inverter May 25, 2012 Features  Short circuit withstand time (8 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 8 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (100 ns typ.) in one package  Trench gate and thin wafer technolo

Datasheet: RJH60F3DPK , RJH60F3DPQ-A0 , RJH60F4DPQ-A0 , RJH60F5DPQ-A0 , RJH60F6DPQ-A0 , RJH60F7DPQ-A0 , RJH60M0DPQ-A0 , RJH60M1DPE , G30N60C3D , RJH60M2DPE , RJH60M2DPP-M0 , RJH60M3DPE , RJH60M3DPP-M0 , RJH60M3DPQ-A0 , RJH60M5DPQ-A0 , RJH60M6DPQ-A0 , RJH60M7DPQ-A0 .

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