All IGBT. RJH60F6DPK Datasheet

 

RJH60F6DPK IGBT. Datasheet pdf. Equivalent


   Type Designator: RJH60F6DPK
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 297.6
   Maximum Collector-Emitter Voltage |Vce|, V: 600
   Maximum Gate-Emitter Voltage |Vge|, V: 30
   Maximum Collector Current |Ic| @25℃, A: 85
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.35
   Maximum Junction Temperature (Tj), ℃: 150
   Rise Time (tr), typ, nS: 80
   Collector Capacity (Cc), typ, pF: 150
   Package: TO3P

 RJH60F6DPK Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

RJH60F6DPK Datasheet (PDF)

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 r07ds0236ej rjh60f6dpk.pdf

RJH60F6DPK RJH60F6DPK

Preliminary Datasheet RJH60F6DPK R07DS0236EJ0200(Previous: REJ03G1940-0100)Silicon N Channel IGBT Rev.2.00High Speed Power Switching Nov 30, 2010Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed s

 ..2. Size:83K  renesas
 rjh60f6dpk.pdf

RJH60F6DPK RJH60F6DPK

Preliminary Datasheet RJH60F6DPK R07DS0236EJ0200(Previous: REJ03G1940-0100)Silicon N Channel IGBT Rev.2.00High Speed Power Switching Nov 30, 2010Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed s

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 rjh60f6dpq-a0.pdf

RJH60F6DPK RJH60F6DPK

Preliminary Datasheet RJH60F6DPQ-A0 R07DS0327EJ0200600 V - 45 A - IGBT Rev.2.00High Speed Power Switching Jul 22, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 74 ns typ. (a

 5.2. Size:90K  renesas
 r07ds0327ej rjh60f6dpq.pdf

RJH60F6DPK RJH60F6DPK

Preliminary Datasheet RJH60F6DPQ-A0 R07DS0327EJ0200600 V - 45 A - IGBT Rev.2.00High Speed Power Switching Jul 22, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 74 ns typ. (a

 7.1. Size:93K  renesas
 rjh60f6bdpq-a0.pdf

RJH60F6DPK RJH60F6DPK

Preliminary Datasheet RJH60F6BDPQ-A0 R07DS0632EJ0100600V - 45A - IGBT Rev.1.00High Speed Power Switching Feb 17, 2012Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 74 ns typ. (at

Datasheet: RJP60F5DPM , RJP63F3DPP-M0 , RJP63K2DPK-M0 , RJP63K2DPP-M0 , RJP6085DPN-00 , RJP6085DPK , RJH60F0DPK , RJH60F4DPK , CRG15T120BNR3S , RJH60F7ADPK , RJH60F5DPK , RJH60C9DPD , RJH60D1DPP-M0 , RJH60D1DPE , RJH60D2DPP-M0 , RJH60D2DPE , RJH60D3DPP-M0 .

 

 
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