Справочник IGBT. RJH60F6DPK

 

RJH60F6DPK - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: RJH60F6DPK
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   Максимальная рассеиваемая мощность (Pc), W: 297.6
   Предельно-допустимое напряжение коллектор-эмиттер |Vce|, V: 600
   Максимально допустимое напряжение эмиттер-затвор |Vge|, V: 30
   Максимальный постоянный ток коллектора |Ic| @25℃, A: 85
   Напряжение насыщения коллектор-эмиттер типовое |VCE(sat)|, V: 1.35
   Максимальная температура перехода (Tj), ℃: 150
   Время нарастания типовое (tr), nS: 80
   Емкость коллектора типовая (Cc), pf: 150
   Тип корпуса: TO3P

 Аналог (замена) для RJH60F6DPK

 

 

RJH60F6DPK Datasheet (PDF)

 ..1. Size:86K  renesas
 r07ds0236ej rjh60f6dpk.pdf

RJH60F6DPK RJH60F6DPK

Preliminary Datasheet RJH60F6DPK R07DS0236EJ0200(Previous: REJ03G1940-0100)Silicon N Channel IGBT Rev.2.00High Speed Power Switching Nov 30, 2010Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed s

 ..2. Size:83K  renesas
 rjh60f6dpk.pdf

RJH60F6DPK RJH60F6DPK

Preliminary Datasheet RJH60F6DPK R07DS0236EJ0200(Previous: REJ03G1940-0100)Silicon N Channel IGBT Rev.2.00High Speed Power Switching Nov 30, 2010Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed s

 5.1. Size:87K  renesas
 rjh60f6dpq-a0.pdf

RJH60F6DPK RJH60F6DPK

Preliminary Datasheet RJH60F6DPQ-A0 R07DS0327EJ0200600 V - 45 A - IGBT Rev.2.00High Speed Power Switching Jul 22, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 74 ns typ. (a

 5.2. Size:90K  renesas
 r07ds0327ej rjh60f6dpq.pdf

RJH60F6DPK RJH60F6DPK

Preliminary Datasheet RJH60F6DPQ-A0 R07DS0327EJ0200600 V - 45 A - IGBT Rev.2.00High Speed Power Switching Jul 22, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 74 ns typ. (a

 7.1. Size:93K  renesas
 rjh60f6bdpq-a0.pdf

RJH60F6DPK RJH60F6DPK

Preliminary Datasheet RJH60F6BDPQ-A0 R07DS0632EJ0100600V - 45A - IGBT Rev.1.00High Speed Power Switching Feb 17, 2012Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 74 ns typ. (at

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