All IGBT. RJH60F7ADPK Equivalents Search

 

RJH60F7ADPK Specs and Replacement


   Type Designator: RJH60F7ADPK
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 328.9 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic| ⓘ - Maximum Collector Current: 90 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.35 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 81 nS
   Coesⓘ - Output Capacitance, typ: 198 pF
   Package: TO3P
 

 RJH60F7ADPK Substitution

   - IGBT ⓘ Cross-Reference Search

 

RJH60F7ADPK specs

 ..1. Size:82K  renesas
 rjh60f7adpk.pdf pdf_icon

RJH60F7ADPK

Preliminary Datasheet RJH60F7ADPK R07DS0237EJ0300 (Previous REJ03G1837-0200) Silicon N Channel IGBT Rev.3.00 High Speed Power Switching Jan 05, 2011 Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed ... See More ⇒

 4.1. Size:85K  renesas
 r07ds0237ej rjh60f7adp.pdf pdf_icon

RJH60F7ADPK

Preliminary Datasheet RJH60F7ADPK R07DS0237EJ0300 (Previous REJ03G1837-0200) Silicon N Channel IGBT Rev.3.00 High Speed Power Switching Jan 05, 2011 Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed ... See More ⇒

 7.1. Size:89K  renesas
 r07ds0328ej rjh60f7dpq.pdf pdf_icon

RJH60F7ADPK

Preliminary Datasheet B0 RJH60F7DPQ-A0 R07DS0328EJ0200 600 V - 50 A - IGBT Rev.2.00 High Speed Power Switching Jul 22, 2011 B1 Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 74 ns... See More ⇒

 7.2. Size:86K  renesas
 rjh60f7dpq-a0.pdf pdf_icon

RJH60F7ADPK

Preliminary Datasheet B0 RJH60F7DPQ-A0 R07DS0328EJ0200 600 V - 50 A - IGBT Rev.2.00 High Speed Power Switching Jul 22, 2011 B1 Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 74 ns... See More ⇒

SHOW MORE

Specs: RJP63F3DPP-M0 , RJP63K2DPK-M0 , RJP63K2DPP-M0 , RJP6085DPN-00 , RJP6085DPK , RJH60F0DPK , RJH60F4DPK , RJH60F6DPK , GT30F125 , RJH60F5DPK , RJH60C9DPD , RJH60D1DPP-M0 , RJH60D1DPE , RJH60D2DPP-M0 , RJH60D2DPE , RJH60D3DPP-M0 , RJH60D3DPE .

History: RJH60F5DPK

Keywords - RJH60F7ADPK transistor spec

 RJH60F7ADPK cross reference
 RJH60F7ADPK equivalent finder
 RJH60F7ADPK lookup
 RJH60F7ADPK substitution
 RJH60F7ADPK replacement

 

 
Back to Top

 


 
.