RJH60F5DPK Datasheet. Specs and Replacement

Type Designator: RJH60F5DPK  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 260.4 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 80 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.37 V @25℃

tr ⓘ - Rise Time, typ: 35 nS

Coesⓘ - Output Capacitance, typ: 122 pF

Package: TO3P

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RJH60F5DPK datasheet

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RJH60F5DPK

Preliminary Datasheet RJH60F5DPK R07DS0055EJ0300 Silicon N Channel IGBT Rev.3.00 High Speed Power Switching Nov 24, 2010 Features Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tr = 85 ns typ. (at I... See More ⇒

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RJH60F5DPK

Preliminary www.DataSheet4U.com RJH60F5DPK Silicon N Channel IGBT REJ03G1836-0100 Rev.1.00 High Speed Power Switching Oct 13, 2009 Features High speed switching Low on-state voltage Fast recovery diode Outline RENESAS Package code PRSS0004ZE-A (Package name TO-3P) C 4 1. Gate 2. Collector G 3. Emitter 4. Collector (Flange) 1 2 3 E Absolute Max... See More ⇒

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 r07ds0326ej rjh60f5dpq.pdf pdf_icon

RJH60F5DPK

Preliminary Datasheet RJH60F5DPQ-A0 R07DS0326EJ0200 600 V - 40 A - IGBT Rev.2.00 High Speed Power Switching Jul 22, 2011 Features Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tr = 85 ns typ. (at I... See More ⇒

 5.2. Size:85K  renesas
 rjh60f5dpq-a0.pdf pdf_icon

RJH60F5DPK

Preliminary Datasheet RJH60F5DPQ-A0 R07DS0326EJ0200 600 V - 40 A - IGBT Rev.2.00 High Speed Power Switching Jul 22, 2011 Features Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tr = 85 ns typ. (at I... See More ⇒

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Specs: RJP63K2DPK-M0, RJP63K2DPP-M0, RJP6085DPN-00, RJP6085DPK, RJH60F0DPK, RJH60F4DPK, RJH60F6DPK, RJH60F7ADPK, TGPF30N43P, RJH60C9DPD, RJH60D1DPP-M0, RJH60D1DPE, RJH60D2DPP-M0, RJH60D2DPE, RJH60D3DPP-M0, RJH60D3DPE, RJP60D0DPK

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