RJH60F5DPK Datasheet and Replacement

Preliminary Datasheet RJH60F5DPK R07DS0055EJ0300Silicon N Channel IGBT Rev.3.00High Speed Power Switching Nov 24, 2010Features Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tr = 85 ns typ. (at I

Preliminary www.DataSheet4U.comRJH60F5DPK Silicon N Channel IGBT REJ03G1836-0100 Rev.1.00 High Speed Power Switching Oct 13, 2009Features High speed switching Low on-state voltage Fast recovery diode Outline RENESAS Package code: PRSS0004ZE-A(Package name: TO-3P)C41. Gate2. CollectorG3. Emitter4. Collector (Flange)123EAbsolute Max

Preliminary Datasheet RJH60F5DPQ-A0 R07DS0326EJ0200600 V - 40 A - IGBT Rev.2.00High Speed Power Switching Jul 22, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tr = 85 ns typ. (at I

Preliminary Datasheet RJH60F5DPQ-A0 R07DS0326EJ0200600 V - 40 A - IGBT Rev.2.00High Speed Power Switching Jul 22, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tr = 85 ns typ. (at I

Preliminary Datasheet RJH60F5BDPQ-A0 R07DS0631EJ0100600V - 40A - IGBT Rev.1.00High Speed Power Switching Feb 17, 2012Features Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 68 ns typ. (at IC