All IGBT. RJH60F5DPK Datasheet

 

RJH60F5DPK IGBT. Datasheet pdf. Equivalent


   Type Designator: RJH60F5DPK
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 260.4
   Maximum Collector-Emitter Voltage |Vce|, V: 600
   Maximum Gate-Emitter Voltage |Vge|, V: 30
   Maximum Collector Current |Ic| @25℃, A: 80
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.37
   Maximum Junction Temperature (Tj), ℃: 150
   Rise Time (tr), typ, nS: 35
   Collector Capacity (Cc), typ, pF: 122
   Package: TO3P

 RJH60F5DPK Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

RJH60F5DPK Datasheet (PDF)

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 r07ds0055ej rjh60f5dpk.pdf

RJH60F5DPK RJH60F5DPK

Preliminary Datasheet RJH60F5DPK R07DS0055EJ0300Silicon N Channel IGBT Rev.3.00High Speed Power Switching Nov 24, 2010Features Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tr = 85 ns typ. (at I

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 rjh60f5dpk.pdf

RJH60F5DPK RJH60F5DPK

Preliminary www.DataSheet4U.comRJH60F5DPK Silicon N Channel IGBT REJ03G1836-0100 Rev.1.00 High Speed Power Switching Oct 13, 2009Features High speed switching Low on-state voltage Fast recovery diode Outline RENESAS Package code: PRSS0004ZE-A(Package name: TO-3P)C41. Gate2. CollectorG3. Emitter4. Collector (Flange)123EAbsolute Max

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 r07ds0326ej rjh60f5dpq.pdf

RJH60F5DPK RJH60F5DPK

Preliminary Datasheet RJH60F5DPQ-A0 R07DS0326EJ0200600 V - 40 A - IGBT Rev.2.00High Speed Power Switching Jul 22, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tr = 85 ns typ. (at I

 5.2. Size:85K  renesas
 rjh60f5dpq-a0.pdf

RJH60F5DPK RJH60F5DPK

Preliminary Datasheet RJH60F5DPQ-A0 R07DS0326EJ0200600 V - 40 A - IGBT Rev.2.00High Speed Power Switching Jul 22, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tr = 85 ns typ. (at I

 7.1. Size:92K  renesas
 rjh60f5bdpq-a0.pdf

RJH60F5DPK RJH60F5DPK

Preliminary Datasheet RJH60F5BDPQ-A0 R07DS0631EJ0100600V - 40A - IGBT Rev.1.00High Speed Power Switching Feb 17, 2012Features Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 68 ns typ. (at IC

Datasheet: RJP63K2DPK-M0 , RJP63K2DPP-M0 , RJP6085DPN-00 , RJP6085DPK , RJH60F0DPK , RJH60F4DPK , RJH60F6DPK , RJH60F7ADPK , FGH40N60SMD , RJH60C9DPD , RJH60D1DPP-M0 , RJH60D1DPE , RJH60D2DPP-M0 , RJH60D2DPE , RJH60D3DPP-M0 , RJH60D3DPE , RJP60D0DPK .

 

 
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