RJH60D1DPP-M0 PDF and Equivalents Search

 

RJH60D1DPP-M0 Specs and Replacement

Type Designator: RJH60D1DPP-M0

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 30 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 20 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃

tr ⓘ - Rise Time, typ: 13 nS

Coesⓘ - Output Capacitance, typ: 25 pF

Package: TO220F

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RJH60D1DPP-M0 datasheet

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 rjh60d1dpp-m0.pdf pdf_icon

RJH60D1DPP-M0

Preliminary Datasheet RJH60D1DPP-M0 R07DS0158EJ0400 600V - 10A - IGBT Rev.4.00 Application Inverter Apr 19, 2012 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (70 ns typ.) in one package Trench gate and thin wafer tech... See More ⇒

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 rjh60d1dpp-e0.pdf pdf_icon

RJH60D1DPP-M0

Preliminary Datasheet RJH60D1DPP-E0 R07DS0893EJ0100 600V - 10A - IGBT Rev.1.00 Application Inverter Nov 01, 2012 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (70 ns typ.) in one package Trench gate and thin wafer tech... See More ⇒

 4.1. Size:82K  renesas
 r07ds0158ej rjh60d1dpp.pdf pdf_icon

RJH60D1DPP-M0

Preliminary Datasheet RJH60D1DPP-M0 R07DS0158EJ0300 Silicon N Channel IGBT Rev.3.00 Application Inverter Nov 16, 2010 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafe... See More ⇒

 5.1. Size:81K  renesas
 r07ds0157ej rjh60d1dpe.pdf pdf_icon

RJH60D1DPP-M0

Preliminary Datasheet RJH60D1DPE R07DS0157EJ0300 Silicon N Channel IGBT Rev.3.00 Application Inverter Nov 16, 2010 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer t... See More ⇒

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Specs: RJP6085DPN-00 , RJP6085DPK , RJH60F0DPK , RJH60F4DPK , RJH60F6DPK , RJH60F7ADPK , RJH60F5DPK , RJH60C9DPD , XNF15N60T , RJH60D1DPE , RJH60D2DPP-M0 , RJH60D2DPE , RJH60D3DPP-M0 , RJH60D3DPE , RJP60D0DPK , RJH60D5DPK , RJH60D6DPK .

History: VS-GP100TS60SFPBF

Keywords - RJH60D1DPP-M0 transistor spec

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