All IGBT. RJH60D1DPP-M0 Datasheet

 

RJH60D1DPP-M0 Datasheet and Replacement


   Type Designator: RJH60D1DPP-M0
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 30 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic| ⓘ - Maximum Collector Current: 20 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 13 nS
   Coesⓘ - Output Capacitance, typ: 25 pF
   Qg ⓘ - Total Gate Charge, typ: 13 nC
   Package: TO220F
 

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RJH60D1DPP-M0 Datasheet (PDF)

 ..1. Size:93K  renesas
 rjh60d1dpp-m0.pdf pdf_icon

RJH60D1DPP-M0

Preliminary Datasheet RJH60D1DPP-M0 R07DS0158EJ0400600V - 10A - IGBT Rev.4.00Application: Inverter Apr 19, 2012Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (70 ns typ.) in one package Trench gate and thin wafer tech

 3.1. Size:120K  renesas
 rjh60d1dpp-e0.pdf pdf_icon

RJH60D1DPP-M0

Preliminary Datasheet RJH60D1DPP-E0 R07DS0893EJ0100600V - 10A - IGBT Rev.1.00Application: Inverter Nov 01, 2012Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (70 ns typ.) in one package Trench gate and thin wafer tech

 4.1. Size:82K  renesas
 r07ds0158ej rjh60d1dpp.pdf pdf_icon

RJH60D1DPP-M0

Preliminary Datasheet RJH60D1DPP-M0 R07DS0158EJ0300Silicon N Channel IGBT Rev.3.00Application: Inverter Nov 16, 2010Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafe

 5.1. Size:81K  renesas
 r07ds0157ej rjh60d1dpe.pdf pdf_icon

RJH60D1DPP-M0

Preliminary Datasheet RJH60D1DPE R07DS0157EJ0300Silicon N Channel IGBT Rev.3.00Application: Inverter Nov 16, 2010Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer t

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Datasheet: RJP6085DPN-00 , RJP6085DPK , RJH60F0DPK , RJH60F4DPK , RJH60F6DPK , RJH60F7ADPK , RJH60F5DPK , RJH60C9DPD , RGT50TS65D , RJH60D1DPE , RJH60D2DPP-M0 , RJH60D2DPE , RJH60D3DPP-M0 , RJH60D3DPE , RJP60D0DPK , RJH60D5DPK , RJH60D6DPK .

History: MG25Q6ES51

Keywords - RJH60D1DPP-M0 transistor datasheet

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 RJH60D1DPP-M0 equivalent finder
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 RJH60D1DPP-M0 substitution
 RJH60D1DPP-M0 replacement

 

 
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