Справочник IGBT. RJH60D1DPP-M0

 

RJH60D1DPP-M0 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.

Наименование: RJH60D1DPP-M0

Тип транзистора: IGBT

Тип управляющего канала: N-Channel

Предельно-допустимое напряжение коллектор-эмиттер |Vce|, V: 600

Максимальный постоянный ток коллектора |Ic| @25℃, A: 16

Напряжение насыщения коллектор-эмиттер типовое |VCE(sat)|, V: 1.6

Время нарастания типовое (tr), nS: 100

Тип корпуса: TO220FL

Аналог (замена) для RJH60D1DPP-M0

 

 

RJH60D1DPP-M0 Datasheet (PDF)

 ..1. Size:93K  renesas
 rjh60d1dpp-m0.pdf

RJH60D1DPP-M0 RJH60D1DPP-M0

Preliminary Datasheet RJH60D1DPP-M0 R07DS0158EJ0400600V - 10A - IGBT Rev.4.00Application: Inverter Apr 19, 2012Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (70 ns typ.) in one package Trench gate and thin wafer tech

 3.1. Size:120K  renesas
 rjh60d1dpp-e0.pdf

RJH60D1DPP-M0 RJH60D1DPP-M0

Preliminary Datasheet RJH60D1DPP-E0 R07DS0893EJ0100600V - 10A - IGBT Rev.1.00Application: Inverter Nov 01, 2012Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (70 ns typ.) in one package Trench gate and thin wafer tech

 4.1. Size:82K  renesas
 r07ds0158ej rjh60d1dpp.pdf

RJH60D1DPP-M0 RJH60D1DPP-M0

Preliminary Datasheet RJH60D1DPP-M0 R07DS0158EJ0300Silicon N Channel IGBT Rev.3.00Application: Inverter Nov 16, 2010Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafe

 5.1. Size:81K  renesas
 r07ds0157ej rjh60d1dpe.pdf

RJH60D1DPP-M0 RJH60D1DPP-M0

Preliminary Datasheet RJH60D1DPE R07DS0157EJ0300Silicon N Channel IGBT Rev.3.00Application: Inverter Nov 16, 2010Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer t

 5.2. Size:102K  renesas
 rjh60d1dpe.pdf

RJH60D1DPP-M0 RJH60D1DPP-M0

Preliminary Datasheet RJH60D1DPE R07DS0157EJ0400600V - 10A - IGBT Rev.4.00Application: Inverter Apr 19, 2012Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer techno

Другие IGBT... RJP6085DPN-00 , RJP6085DPK , RJH60F0DPK , RJH60F4DPK , RJH60F6DPK , RJH60F7ADPK , RJH60F5DPK , RJH60C9DPD , SGP30N60 , RJH60D1DPE , RJH60D2DPP-M0 , RJH60D2DPE , RJH60D3DPP-M0 , RJH60D3DPE , RJP60D0DPK , RJH60D5DPK , RJH60D6DPK .

 

 
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