All IGBT. RJH60D2DPE Datasheet

 

RJH60D2DPE IGBT. Datasheet pdf. Equivalent


   Type Designator: RJH60D2DPE
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 63
   Maximum Collector-Emitter Voltage |Vce|, V: 600
   Maximum Gate-Emitter Voltage |Vge|, V: 30
   Maximum Collector Current |Ic| @25℃, A: 25
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.7
   Maximum Junction Temperature (Tj), ℃: 150
   Rise Time (tr), typ, nS: 13
   Collector Capacity (Cc), typ, pF: 40
   Total Gate Charge (Qg), typ, nC: 19
   Package: LDPAK SC83

 RJH60D2DPE Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

RJH60D2DPE Datasheet (PDF)

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 rjh60d2dpe.pdf

RJH60D2DPE RJH60D2DPE

Preliminary Datasheet RJH60D2DPE R07DS0159EJ0400600V - 12A - IGBT Rev.4.00Application: Inverter Apr 19, 2012Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer techno

 ..2. Size:82K  renesas
 r07ds0159ej rjh60d2dpe.pdf

RJH60D2DPE RJH60D2DPE

Preliminary Datasheet RJH60D2DPE R07DS0159EJ0300Silicon N Channel IGBT Rev.3.00Application: Inverter Nov 16, 2010Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer t

 5.1. Size:82K  renesas
 r07ds0160ej rjh60d2dpp.pdf

RJH60D2DPE RJH60D2DPE

Preliminary Datasheet RJH60D2DPP-M0 R07DS0160EJ0300Silicon N Channel IGBT Rev.3.00Application: Inverter Nov 16, 2010Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafe

 5.2. Size:121K  renesas
 rjh60d2dpp-e0.pdf

RJH60D2DPE RJH60D2DPE

Preliminary Datasheet RJH60D2DPP-E0 R07DS0894EJ0100600V - 12A - IGBT Rev.1.00Application: Inverter Nov 01, 2012Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer tec

 5.3. Size:99K  renesas
 rjh60d2dpp-m0.pdf

RJH60D2DPE RJH60D2DPE

Preliminary Datasheet RJH60D2DPP-M0 R07DS0160EJ0400600V - 12A - IGBT Rev.4.00Application: Inverter Apr 19, 2012Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer tec

Datasheet: RJH60F4DPK , RJH60F6DPK , RJH60F7ADPK , RJH60F5DPK , RJH60C9DPD , RJH60D1DPP-M0 , RJH60D1DPE , RJH60D2DPP-M0 , GT30F125 , RJH60D3DPP-M0 , RJH60D3DPE , RJP60D0DPK , RJH60D5DPK , RJH60D6DPK , RJH60D7DPK , RJH60D0DPK , RJP60D0DPM .

 

 
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