RJH60D5DPK Datasheet. Specs and Replacement

Type Designator: RJH60D5DPK  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 200 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 75 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃

tr ⓘ - Rise Time, typ: 40 nS

Coesⓘ - Output Capacitance, typ: 120 pF

Package: TO3P

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RJH60D5DPK datasheet

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RJH60D5DPK

Preliminary Datasheet RJH60D5DPK R07DS0163EJ0400 600V - 37A - IGBT Rev.4.00 Application Inverter Apr 19, 2012 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer techno... See More ⇒

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RJH60D5DPK

Preliminary Datasheet RJH60D5DPK R07DS0163EJ0300 Silicon N Channel IGBT Rev.3.00 Application Inverter Nov 16, 2010 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer t... See More ⇒

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RJH60D5DPK

Preliminary Datasheet RJH60D5DPQ-A0 R07DS0527EJ0100 600 V - 37 A - IGBT Rev.1.00 Application Inverter Aug 26, 2011 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer t... See More ⇒

 5.2. Size:98K  renesas
 rjh60d5dpm.pdf pdf_icon

RJH60D5DPK

Preliminary Datasheet RJH60D5DPM R07DS0174EJ0200 600V - 37A - IGBT Rev.2.00 Application Inverter Apr 19, 2012 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer techno... See More ⇒

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Specs: RJH60C9DPD, RJH60D1DPP-M0, RJH60D1DPE, RJH60D2DPP-M0, RJH60D2DPE, RJH60D3DPP-M0, RJH60D3DPE, RJP60D0DPK, BT60T60ANFK, RJH60D6DPK, RJH60D7DPK, RJH60D0DPK, RJP60D0DPM, TIG110BF, TIG110GMH, TIG111BF, TIG111GMH

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