All IGBT. RJH60D5DPK Datasheet

 

RJH60D5DPK Datasheet and Replacement


   Type Designator: RJH60D5DPK
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 200 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic| ⓘ - Maximum Collector Current: 75 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 40 nS
   Coesⓘ - Output Capacitance, typ: 120 pF
   Package: TO3P

 RJH60D5DPK Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

RJH60D5DPK Datasheet (PDF)

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RJH60D5DPK

Preliminary Datasheet RJH60D5DPK R07DS0163EJ0400 600V - 37A - IGBT Rev.4.00 Application Inverter Apr 19, 2012 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer techno... See More ⇒

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RJH60D5DPK

Preliminary Datasheet RJH60D5DPK R07DS0163EJ0300 Silicon N Channel IGBT Rev.3.00 Application Inverter Nov 16, 2010 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer t... See More ⇒

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RJH60D5DPK

Preliminary Datasheet RJH60D5DPQ-A0 R07DS0527EJ0100 600 V - 37 A - IGBT Rev.1.00 Application Inverter Aug 26, 2011 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer t... See More ⇒

 5.2. Size:98K  renesas
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RJH60D5DPK

Preliminary Datasheet RJH60D5DPM R07DS0174EJ0200 600V - 37A - IGBT Rev.2.00 Application Inverter Apr 19, 2012 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer techno... See More ⇒

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Datasheet: RJH60C9DPD , RJH60D1DPP-M0 , RJH60D1DPE , RJH60D2DPP-M0 , RJH60D2DPE , RJH60D3DPP-M0 , RJH60D3DPE , RJP60D0DPK , IRGB20B60PD1 , RJH60D6DPK , RJH60D7DPK , RJH60D0DPK , RJP60D0DPM , TIG110BF , TIG110GMH , TIG111BF , TIG111GMH .

Keywords - RJH60D5DPK transistor datasheet

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