RJH60D7DPK Datasheet. Specs and Replacement

Type Designator: RJH60D7DPK  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 300 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 90 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃

tr ⓘ - Rise Time, typ: 46 nS

Coesⓘ - Output Capacitance, typ: 160 pF

Package: TO3P

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RJH60D7DPK datasheet

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RJH60D7DPK

Preliminary Datasheet RJH60D7DPK R07DS0165EJ0300 Silicon N Channel IGBT Rev.3.00 Application Inverter Nov 16, 2010 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer t... See More ⇒

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RJH60D7DPK

Preliminary Datasheet RJH60D7DPK R07DS0165EJ0400 600V - 50A - IGBT Rev.4.00 Application Inverter Apr 19, 2012 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer techno... See More ⇒

 5.1. Size:84K  renesas
 r07ds0176ej rjh60d7dpm.pdf pdf_icon

RJH60D7DPK

Preliminary Datasheet RJH60D7DPM R07DS0176EJ0200 Silicon N Channel IGBT Rev.2.00 Application Inverter Nov 16, 2010 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer t... See More ⇒

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 rjh60d7dpq-e0.pdf pdf_icon

RJH60D7DPK

Preliminary Datasheet RJH60D7DPQ-E0 R07DS0740EJ0100 600V - 50A - IGBT Rev.1.00 Application Inverter Apr 19, 2012 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer tec... See More ⇒

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Specs: RJH60D1DPE, RJH60D2DPP-M0, RJH60D2DPE, RJH60D3DPP-M0, RJH60D3DPE, RJP60D0DPK, RJH60D5DPK, RJH60D6DPK, GT30F131, RJH60D0DPK, RJP60D0DPM, TIG110BF, TIG110GMH, TIG111BF, TIG111GMH, TIG052TS, TIG056BF

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