RJH60D0DPK PDF and Equivalents Search

 

RJH60D0DPK Specs and Replacement

Type Designator: RJH60D0DPK

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 140 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 45 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃

tr ⓘ - Rise Time, typ: 20 nS

Coesⓘ - Output Capacitance, typ: 70 pF

Package: TO3P

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RJH60D0DPK datasheet

 ..1. Size:97K  renesas
 rjh60d0dpk.pdf pdf_icon

RJH60D0DPK

Preliminary Datasheet RJH60D0DPK R07DS0155EJ0400 600V - 22A - IGBT Rev.4.00 Application Inverter Apr 19, 2012 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer techno... See More ⇒

 ..2. Size:82K  renesas
 r07ds0155ej rjh60d0dpk.pdf pdf_icon

RJH60D0DPK

Preliminary Datasheet RJH60D0DPK R07DS0155EJ0300 Silicon N Channel IGBT Rev.3.00 Application Inverter Nov 15, 2010 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer t... See More ⇒

 5.1. Size:97K  renesas
 rjh60d0dpm.pdf pdf_icon

RJH60D0DPK

Preliminary Datasheet RJH60D0DPM R07DS0156EJ0300 600V - 22A - IGBT Rev.3.00 Application Inverter Apr 19, 2012 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer techno... See More ⇒

 5.2. Size:82K  renesas
 rjh60d0dpq-a0.pdf pdf_icon

RJH60D0DPK

Preliminary Datasheet RJH60D0DPQ-A0 R07DS0526EJ0100 600 V - 22 A - IGBT Rev.1.00 Application Inverter Aug 26, 2011 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer t... See More ⇒

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Specs: RJH60D2DPP-M0 , RJH60D2DPE , RJH60D3DPP-M0 , RJH60D3DPE , RJP60D0DPK , RJH60D5DPK , RJH60D6DPK , RJH60D7DPK , GT30F132 , RJP60D0DPM , TIG110BF , TIG110GMH , TIG111BF , TIG111GMH , TIG052TS , TIG056BF , TIG058E8 .

History: SRE40N065FSUR

Keywords - RJH60D0DPK transistor spec

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