All IGBT. RJH60D0DPK Datasheet

 

RJH60D0DPK IGBT. Datasheet pdf. Equivalent

Type Designator: RJH60D0DPK

Type of IGBT Channel: N-Channel

Maximum Collector-Emitter Voltage |Vce|, V: 600V

Collector-Emitter saturation Voltage |Vcesat|, V: 1.6V

Maximum Collector Current |Ic|, A: 40A

Rise Time, nS: 100

Package: TO3P

RJH60D0DPK Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

RJH60D0DPK Datasheet (PDF)

1.1. r07ds0155ej rjh60d0dpk.pdf Size:82K _renesas

RJH60D0DPK
RJH60D0DPK

Preliminary Datasheet RJH60D0DPK R07DS0155EJ0300 Silicon N Channel IGBT Rev.3.00 Application: Inverter Nov 15, 2010 Features ? Short circuit withstand time (5 ?s typ.) ? Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode (100 ns typ.) in one package ? Trench gate and thin wafer technology ?

1.2. r07ds0156ej rjh60d0dpm.pdf Size:83K _renesas

RJH60D0DPK
RJH60D0DPK

Preliminary Datasheet RJH60D0DPM R07DS0156EJ0200 Silicon N Channel IGBT Rev.2.00 Application: Inverter Nov 16, 2010 Features ? Short circuit withstand time (5 ?s typ.) ? Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode (100 ns typ.) in one package ? Trench gate and thin wafer technology ?

1.3. r07ds0526ej rjh60d0dpq.pdf Size:85K _renesas

RJH60D0DPK
RJH60D0DPK

Preliminary Datasheet RJH60D0DPQ-A0 R07DS0526EJ0100 600 V - 22 A - IGBT Rev.1.00 Application: Inverter Aug 26, 2011 Features ? Short circuit withstand time (5 ?s typ.) ? Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode (100 ns typ.) in one package ? Trench gate and thin wafer technology ?

1.4. rjh60d0dpk.pdf Size:97K _igbt

RJH60D0DPK
RJH60D0DPK

 Preliminary Datasheet RJH60D0DPK R07DS0155EJ0400 600V - 22A - IGBT Rev.4.00 Application: Inverter Apr 19, 2012 Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (100 ns typ.) in one package  Trench gate and thin wafer techno

1.5. rjh60d0dpm.pdf Size:97K _igbt

RJH60D0DPK
RJH60D0DPK

 Preliminary Datasheet RJH60D0DPM R07DS0156EJ0300 600V - 22A - IGBT Rev.3.00 Application: Inverter Apr 19, 2012 Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (100 ns typ.) in one package  Trench gate and thin wafer techno

1.6. rjh60d0dpq-a0.pdf Size:82K _igbt

RJH60D0DPK
RJH60D0DPK

 Preliminary Datasheet RJH60D0DPQ-A0 R07DS0526EJ0100 600 V - 22 A - IGBT Rev.1.00 Application: Inverter Aug 26, 2011 Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (100 ns typ.) in one package  Trench gate and thin wafer t

Datasheet: RJH60D2DPP-M0 , RJH60D2DPE , RJH60D3DPP-M0 , RJH60D3DPE , RJP60D0DPK , RJH60D5DPK , RJH60D6DPK , RJH60D7DPK , IXGR48N60C3D1 , RJP60D0DPM , TIG110BF , TIG110GMH , TIG111BF , TIG111GMH , TIG052TS , TIG056BF , TIG058E8 .

 


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