TIG110BF Datasheet. Specs and Replacement

Type Designator: TIG110BF  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 30 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 27 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃

tr ⓘ - Rise Time, typ: 30 nS

Coesⓘ - Output Capacitance, typ: 45 pF

Package: TO220F

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TIG110BF datasheet

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TIG110BF

TIG110BF Ordering number EN9013A SANYO Semiconductors DATA SHEET N-Channel Non Punch Through IGBT TIG110BF High Power High Speed Switching Applications Features Low-saturation voltage Ultrahigh speed switching Enhansment type Specifications Absolute Maximum Ratings at Ta=25 C, Unless otherwise specified Parameter Symbol Conditions Ratings Unit Collector-to-Emitter... See More ⇒

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TIG110BF

TIG110GMH Ordering number EN9018 SANYO Semiconductors DATA SHEET N-Channel Non Punch Through IGBT TIG110GMH High Power High Speed Switching Applications Features Low-saturation voltage Ultrahigh speed switching Enhansment type Specifications Absolute Maximum Ratings at Ta=25 C, Unless otherwise specified Parameter Symbol Conditions Ratings Unit Collector-to-Emitte... See More ⇒

 9.1. Size:461K  sanyo
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TIG110BF

TIG111BF Ordering number EN9017A SANYO Semiconductors DATA SHEET N-Channel Non Punch Through IGBT TIG111BF High Power High Speed Switching Applications Features Low-saturation voltage Ultrahigh speed switching Enhansment type Specifications Absolute Maximum Ratings at Ta=25 C, Unless otherwise specified Parameter Symbol Conditions Ratings Unit Collector-to-Emitter... See More ⇒

 9.2. Size:474K  sanyo
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TIG110BF

TIG111GMH Ordering number EN9014 SANYO Semiconductors DATA SHEET N-Channel Non Punch Through IGBT TIG111GMH High Power High Speed Switching Applications Features Low-saturation voltage Ultrahigh speed switching Enhansment type Specifications Absolute Maximum Ratings at Ta=25 C, Unless otherwise specified Parameter Symbol Conditions Ratings Unit Collector-to-Emitte... See More ⇒

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Specs: RJH60D3DPP-M0, RJH60D3DPE, RJP60D0DPK, RJH60D5DPK, RJH60D6DPK, RJH60D7DPK, RJH60D0DPK, RJP60D0DPM, IKW40N120H3, TIG110GMH, TIG111BF, TIG111GMH, TIG052TS, TIG056BF, TIG058E8, TIG062E8, TIG064E8

Keywords - TIG110BF transistor spec

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