All IGBT. TIG110BF Datasheet

 

TIG110BF IGBT. Datasheet pdf. Equivalent


   Type Designator: TIG110BF
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 30 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 27 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 30 nS
   Coesⓘ - Output Capacitance, typ: 45 pF
   Qgⓘ - Total Gate Charge, typ: 95 nC
   Package: TO220F

 TIG110BF Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

TIG110BF Datasheet (PDF)

 ..1. Size:463K  sanyo
tig110bf.pdf

TIG110BF
TIG110BF

TIG110BFOrdering number : EN9013ASANYO SemiconductorsDATA SHEETN-Channel Non Punch Through IGBTTIG110BFHigh Power High Speed Switching ApplicationsFeatures Low-saturation voltage Ultrahigh speed switching Enhansment typeSpecificationsAbsolute Maximum Ratings at Ta=25C, Unless otherwise specifiedParameter Symbol Conditions Ratings UnitCollector-to-Emitter

 8.1. Size:479K  sanyo
tig110gmh.pdf

TIG110BF
TIG110BF

TIG110GMHOrdering number : EN9018SANYO SemiconductorsDATA SHEETN-Channel Non Punch Through IGBTTIG110GMHHigh Power High Speed Switching ApplicationsFeatures Low-saturation voltage Ultrahigh speed switching Enhansment typeSpecificationsAbsolute Maximum Ratings at Ta=25C, Unless otherwise specifiedParameter Symbol Conditions Ratings UnitCollector-to-Emitte

 9.1. Size:461K  sanyo
tig111bf.pdf

TIG110BF
TIG110BF

TIG111BFOrdering number : EN9017ASANYO SemiconductorsDATA SHEETN-Channel Non Punch Through IGBTTIG111BFHigh Power High Speed Switching ApplicationsFeatures Low-saturation voltage Ultrahigh speed switching Enhansment typeSpecificationsAbsolute Maximum Ratings at Ta=25C, Unless otherwise specifiedParameter Symbol Conditions Ratings UnitCollector-to-Emitter

 9.2. Size:474K  sanyo
tig111gmh.pdf

TIG110BF
TIG110BF

TIG111GMHOrdering number : EN9014SANYO SemiconductorsDATA SHEETN-Channel Non Punch Through IGBTTIG111GMHHigh Power High Speed Switching ApplicationsFeatures Low-saturation voltage Ultrahigh speed switching Enhansment typeSpecificationsAbsolute Maximum Ratings at Ta=25C, Unless otherwise specifiedParameter Symbol Conditions Ratings UnitCollector-to-Emitte

Datasheet: RJH60D3DPP-M0 , RJH60D3DPE , RJP60D0DPK , RJH60D5DPK , RJH60D6DPK , RJH60D7DPK , RJH60D0DPK , RJP60D0DPM , IHW15N120R3 , TIG110GMH , TIG111BF , TIG111GMH , TIG052TS , TIG056BF , TIG058E8 , TIG062E8 , TIG064E8 .

 

 
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