All IGBT. TIG056BF Datasheet

 

TIG056BF Datasheet and Replacement


   Type Designator: TIG056BF
   Type: IGBT + Built-in Zener Diodes
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 30 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 33 V
   |Ic|ⓘ - Maximum Collector Current: 240(pulse) A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.6 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 32 nS
   Coesⓘ - Output Capacitance, typ: 100 pF
   Package: TO220F
      - IGBT Cross-Reference

 

TIG056BF Datasheet (PDF)

 ..1. Size:324K  sanyo
tig056bf.pdf pdf_icon

TIG056BF

TIG056BF Ordering number : ENA1775ASANYO SemiconductorsDATA SHEETN-Channel IGBTTIG056BFHigh Power High Speed Switching ApplicationsFeatures Low-saturation voltage Ultrahigh speed switching Enhansment typeSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitCollector-to-Emitter Voltage VCES 400 VGate-to-Emitter Volta

 ..2. Size:151K  onsemi
tig056bf-1e tig056bf.pdf pdf_icon

TIG056BF

Ordering number : ENA1775BTIG056BFN-Channel IGBThttp://onsemi.com430V, 240A, VCE(sat); 3.6V TO-220F-3FSFeatures Low-saturation voltage Protection diode in Ultrahigh speed switching Enhansment typeSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCollector to Emitter Voltage VCES 430 VGate to Emitter Voltage VGES

 9.1. Size:61K  1
tig052ts.pdf pdf_icon

TIG056BF

Ordering number : ENA1258 TIG052TSSANYO SemiconductorsDATA SHEETN-Channel IGBTTIG052TSLight-Controlling Flash ApplicationsFeatures Low-saturation voltage. Low voltag drive (2.5V). Enhansment type. Built-in Gate-to-Emitter protection diode. Mounting Height 1.1mm, Mounting Area 19.2mm2. dv / dt guarantee.*SpecificationsAbsolute Maximum Ratings at Ta=2

 9.2. Size:61K  sanyo
tig052gs.pdf pdf_icon

TIG056BF

Ordering number : ENA1258 TIG052TSSANYO SemiconductorsDATA SHEETN-Channel IGBTTIG052TSLight-Controlling Flash ApplicationsFeatures Low-saturation voltage. Low voltag drive (2.5V). Enhansment type. Built-in Gate-to-Emitter protection diode. Mounting Height 1.1mm, Mounting Area 19.2mm2. dv / dt guarantee.*SpecificationsAbsolute Maximum Ratings at Ta=2

Datasheet: RJH60D7DPK , RJH60D0DPK , RJP60D0DPM , TIG110BF , TIG110GMH , TIG111BF , TIG111GMH , TIG052TS , GT30J124 , TIG058E8 , TIG062E8 , TIG064E8 , TIG065E8 , TIG066SS , DGG4015 , FGM622S , FGM623S .

History: IXSK50N60AU1

Keywords - TIG056BF transistor datasheet

 TIG056BF cross reference
 TIG056BF equivalent finder
 TIG056BF lookup
 TIG056BF substitution
 TIG056BF replacement

 

 
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