All IGBT. TIG066SS Datasheet

 

TIG066SS IGBT. Datasheet pdf. Equivalent


   Type Designator: TIG066SS
   Type: IGBT + Built-in Zener Diodes
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 1 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 6 V
   |Ic|ⓘ - Maximum Collector Current: 150(pulse) A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.8 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   Coesⓘ - Output Capacitance, typ: 59 pF
   Package: SOP8

 TIG066SS Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

TIG066SS Datasheet (PDF)

 ..1. Size:477K  sanyo
 tig066ss.pdf

TIG066SS TIG066SS

TIG066SS Ordering number : ENA1794SANYO SemiconductorsDATA SHEETN-Channel IGBTTIG066SSLight-Controlling Flash ApplicationsFeatures Low-saturation voltage 4.0V drive Enhansment type Built-in Gate-to-Emitter protection diode High speed switchingSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitCollector-to-

 9.1. Size:346K  sanyo
 tig062e8.pdf

TIG066SS TIG066SS

TIG062E8Ordering number : ENA1480ASANYO SemiconductorsDATA SHEETN-Channel IGBTTIG062E8Light-Controlling Flash ApplicationsFeatures Low-saturation voltage. Low voltage drive (3V). Enhansment type. Built-in Gate-to-Emitter protection diode. Mounting Height 0.9mm, Mounting Area 8.12mm2. dv / dt guarantee . * Halogen free compliance.Specification

 9.2. Size:322K  sanyo
 tig064e8.pdf

TIG066SS TIG066SS

TIG064E8 Ordering number : ENA1602ASANYO SemiconductorsDATA SHEETN-Channel IGBTTIG064E8Light-Controlling Flash ApplicationsFeatures Low-saturation voltage Low voltage drive (2.5V) Enhansment type Built-in Gate-to-Emitter protection diode Mounting Height 0.9mm, Mounting Area 8.12mm2 dv / dt guarantee * Halogen free complianceSpecifications

 9.3. Size:487K  sanyo
 tig065e8.pdf

TIG066SS TIG066SS

TIG065E8 Ordering number : ENA1862SANYO SemiconductorsDATA SHEETN-Channel IGBTTIG065E8Light-Controlling Flash ApplicationsFeatures Low-saturation voltage Low voltage drive (2.5V) Enhansment type Built-in Gate-to-Emitter protection diode Mounting Height 0.9mm, Mounting Area 8.12mm2 dv / dt guarantee * Halogen free complianceSpecifications

Datasheet: TIG111BF , TIG111GMH , TIG052TS , TIG056BF , TIG058E8 , TIG062E8 , TIG064E8 , TIG065E8 , RJP30H2A , DGG4015 , FGM622S , FGM623S , MGD623N , MGD623S , FGW50N65WE , SKW030N065 , GM200HB12CT .

 

 
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