All IGBT. SKW030N065 Datasheet

 

SKW030N065 Datasheet and Replacement


   Type Designator: SKW030N065
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 234 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 60 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.75 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 67 nS
   Coesⓘ - Output Capacitance, typ: 160 pF
   Qg ⓘ - Total Gate Charge, typ: 64.5 nC
   Package: TO247
 

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SKW030N065 Datasheet (PDF)

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SKW030N065

SKW030N065 IGBT 650V, 30A,Vcesat 1.75VFEATURESProduct SummaryLow gate chargeVDS650VTrench FS Trench FS TechnologyVcesattyp. 1.75VRoHS RoHS productID30AAPPLICATIONS100% DVDS TestedGeneral purpose inverters100% Avalanche TestedUPSUPS SKT030N065Package Markin

Datasheet: TIG065E8 , TIG066SS , DGG4015 , FGM622S , FGM623S , MGD623N , MGD623S , FGW50N65WE , SGT40N60NPFDPN , GM200HB12CT , GM400HB06CT , KGH15N120NDA , KGH25N120NDA , KGT12N120NDH , KGT15N120KDA , KGT15N120NDA , KGT15N120NDH .

Keywords - SKW030N065 transistor datasheet

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