SKW030N065 Datasheet and Replacement
Type Designator: SKW030N065
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 234 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 60 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.75 V @25℃
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 67 nS
Coesⓘ - Output Capacitance, typ: 160 pF
Package: TO247
- IGBT Cross-Reference
SKW030N065 Datasheet (PDF)
skw030n065.pdf
SKW030N065 IGBT 650V, 30A,Vcesat 1.75VFEATURESProduct SummaryLow gate chargeVDS650VTrench FS Trench FS TechnologyVcesattyp. 1.75VRoHS RoHS productID30AAPPLICATIONS100% DVDS TestedGeneral purpose inverters100% Avalanche TestedUPSUPS SKT030N065Package Markin
Datasheet: TIG065E8 , TIG066SS , DGG4015 , FGM622S , FGM623S , MGD623N , MGD623S , FGW50N65WE , CRG40T60AN3H , GM200HB12CT , GM400HB06CT , KGH15N120NDA , KGH25N120NDA , KGT12N120NDH , KGT15N120KDA , KGT15N120NDA , KGT15N120NDH .
History: TSG10N120CN | GT30F123 | 2MBI50N-060 | RJH60F6BDPQ-A0 | FGA15N120FTD | SG50N06D2S | IRG7I319U
Keywords - SKW030N065 transistor datasheet
SKW030N065 cross reference
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History: TSG10N120CN | GT30F123 | 2MBI50N-060 | RJH60F6BDPQ-A0 | FGA15N120FTD | SG50N06D2S | IRG7I319U
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IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
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