KGH15N120NDA Specs and Replacement
Type Designator: KGH15N120NDA
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 200 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 24 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
tr ⓘ - Rise Time, typ: 50 nS
Coesⓘ - Output Capacitance, typ: 140 pF
Package: TO3PN
KGH15N120NDA Substitution - IGBT ⓘ Cross-Reference Search
KGH15N120NDA datasheet
kgh15n120nda.pdf
SEMICONDUCTOR KGH15N120NDA TECHNICAL DATA General Description KEC NPT IGBTs offer lowest losses and highest energy efficiency for application such as IH (induction heating), UPS, General inverter and other soft switching applications. FEATURES High speed switching Higher system efficiency Soft current turn-off waveforms Square RBSOA using NPT technology MAXIMUM RATING (Ta=... See More ⇒
Specs: FGM622S , FGM623S , MGD623N , MGD623S , FGW50N65WE , SKW030N065 , GM200HB12CT , GM400HB06CT , CRG60T60AN3H , KGH25N120NDA , KGT12N120NDH , KGT15N120KDA , KGT15N120NDA , KGT15N120NDH , KGT15N60FDA , KGT20N60KDA , KGT25N120KDA .
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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