All IGBT. KGH15N120NDA Datasheet

 

KGH15N120NDA Datasheet and Replacement


   Type Designator: KGH15N120NDA
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 200 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 24 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7.5 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 50 nS
   Coesⓘ - Output Capacitance, typ: 140 pF
   Qg ⓘ - Total Gate Charge, typ: 140 nC
   Package: TO3PN
 

 KGH15N120NDA substitution

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KGH15N120NDA Datasheet (PDF)

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KGH15N120NDA

SEMICONDUCTORKGH15N120NDATECHNICAL DATAGeneral DescriptionKEC NPT IGBTs offer lowest losses and highest energy efficiency forapplication such as IH (induction heating), UPS, General inverter and othersoft switching applications. FEATURES High speed switchingHigher system efficiencySoft current turn-off waveformsSquare RBSOA using NPT technologyMAXIMUM RATING (Ta=

Datasheet: FGM622S , FGM623S , MGD623N , MGD623S , FGW50N65WE , SKW030N065 , GM200HB12CT , GM400HB06CT , CRG40T60AN3H , KGH25N120NDA , KGT12N120NDH , KGT15N120KDA , KGT15N120NDA , KGT15N120NDH , KGT15N60FDA , KGT20N60KDA , KGT25N120KDA .

History: IRG7PH35U | IHW40T120

Keywords - KGH15N120NDA transistor datasheet

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