All IGBT. KGH15N120NDA Datasheet

 

KGH15N120NDA IGBT. Datasheet pdf. Equivalent


   Type Designator: KGH15N120NDA
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 200 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 24 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 50 nS
   Coesⓘ - Output Capacitance, typ: 140 pF
   Qgⓘ - Total Gate Charge, typ: 140 nC
   Package: TO3PN

 KGH15N120NDA Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

KGH15N120NDA Datasheet (PDF)

 ..1. Size:1426K  kec
 kgh15n120nda.pdf

KGH15N120NDA KGH15N120NDA

SEMICONDUCTORKGH15N120NDATECHNICAL DATAGeneral DescriptionKEC NPT IGBTs offer lowest losses and highest energy efficiency forapplication such as IH (induction heating), UPS, General inverter and othersoft switching applications. FEATURES High speed switchingHigher system efficiencySoft current turn-off waveformsSquare RBSOA using NPT technologyMAXIMUM RATING (Ta=

Datasheet: FGM622S , FGM623S , MGD623N , MGD623S , FGW50N65WE , SKW030N065 , GM200HB12CT , GM400HB06CT , BT40T60ANF , KGH25N120NDA , KGT12N120NDH , KGT15N120KDA , KGT15N120NDA , KGT15N120NDH , KGT15N60FDA , KGT20N60KDA , KGT25N120KDA .

 

 
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