All IGBT. KGT25N120NDH Datasheet

 

KGT25N120NDH IGBT. Datasheet pdf. Equivalent


   Type Designator: KGT25N120NDH
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 225 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 50 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 25 nS
   Coesⓘ - Output Capacitance, typ: 100 pF
   Qgⓘ - Total Gate Charge, typ: 150 nC
   Package: TO3PN

 KGT25N120NDH Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

KGT25N120NDH Datasheet (PDF)

 ..1. Size:1478K  kec
 kgt25n120ndh.pdf

KGT25N120NDH KGT25N120NDH

SEMICONDUCTORKGT25N120NDHTECHNICAL DATAGeneral DescriptionKEC NPT IGBTs offer low switching losses, high energy efficiencyand high avalanche ruggedness for soft switching application such asIH(induction heating), microwave oven, etc.FEATURES High speed switchingHigh system efficiencySoft current turn-off waveformsExtremely enhanced avalanche capabilityMAXIMUM RAT

 3.1. Size:122K  kec
 kgt25n120nda.pdf

KGT25N120NDH KGT25N120NDH

SEMICONDUCTORKGT25N120NDATECHNICAL DATAGeneral DescriptionAKEC NPT IGBTs offer low switching losses, high energy efficiencyQ BNO Kand high avalanche ruggedness for soft switching application such asDIM MILLIMETERSIH(induction heating), microwave oven, etc._A +15.60 0.20_B4.80 + 0.20_C 19.90 + 0.20_D 2.00 0.20FEATURES +_d +1.00 0.20High speed

 5.1. Size:565K  kec
 kgt25n120kda.pdf

KGT25N120NDH KGT25N120NDH

SEMICONDUCTORKGT25N120KDA TECHNICAL DATAGeneral DescriptionBAKEC NPT Trench IGBTs offer low switching losses, high energyOS Kefficiency and short circuit ruggedness.It is designed for applications such as motor control, uninterrupted powersupplies(UPS), general inverters. DIM MILLIMETERS_+A 15.90 0.30_B5.00 + 0.20_C20.85 + 0.30FEATURES _D 3.00 + 0.2

 7.1. Size:1605K  kec
 kgt25n135ndh.pdf

KGT25N120NDH KGT25N120NDH

SEMICONDUCTORKGT25N135NDHTECHNICAL DATAGeneral DescriptionKEC NPT IGBTs offer low switching losses, high energy efficiencyand high avalanche ruggedness for soft switching application such asIH(induction heating), microwave oven, etc.FEATURES High speed switchingHigh system efficiencySoft current turn-off waveformsExtremely enhanced avalanche capabilityMAXIMUM RAT

 7.2. Size:1558K  kec
 kgt25n135kdh.pdf

KGT25N120NDH KGT25N120NDH

SEMICONDUCTORKGT25N135KDHTECHNICAL DATAGeneral DescriptionKEC NPT IGBTs offer low switching losses, high energy efficiencyand high avalanche ruggedness for soft switching application such asIH(induction heating), microwave oven, etc.FEATURES High speed switchingHigh ruggedness, temperature stable behaviorSoft current turn-off waveformsExtremely enhanced avalanche c

Datasheet: KGT12N120NDH , KGT15N120KDA , KGT15N120NDA , KGT15N120NDH , KGT15N60FDA , KGT20N60KDA , KGT25N120KDA , KGT25N120NDA , IRGP4086 , KGT25N135NDH , KGT30N120NDA , KGT30N120NDH , KGT30N60KDA , KGT40N60KDA , KGT50N60KDA , RJH30E2DPP , IRG4PC60UPBF .

 

 
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