All IGBT. GT8G101 Datasheet

 

GT8G101 IGBT. Datasheet pdf. Equivalent

Type Designator: GT8G101

Type of IGBT Channel: N-Channel

Maximum Collector-Emitter Voltage |Vce|, V: 400V

Collector-Emitter saturation Voltage |Vcesat|, V: 8V

Maximum Collector Current |Ic|, A: 130A

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 2000

Package: TOP3

GT8G101 Transistor Equivalent Substitute - IGBT Cross-Reference Search

GT8G101 Datasheet (PDF)

5.1. gt8g151_100812.pdf Size:246K _toshiba

GT8G101
GT8G101

GT8G151 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G151 Strobe Flash Applications Unit: mm Unit: mm Enhancement-mode TSON-8 TSON-8 Low gate drive voltage: VGE = 2.5 V (min.) (@IC = 150 A) Peak collector current: IC = 150 A (max) 0.650.05 0.650.05 8 7 6 5 8 7 6 5 Compact and Thin (TSON-8) package Absolute Maximum Ratings (Ta = 25C) Char

Datasheet: GT60M101 , GT60M102 , GT60M103 , GT60M301 , GT60M302 , GT60M303 , GT75G101 , GT80J101 , SGP10N60A , GT8G102 , GT8G103 , GT8G103LB , GT8G121 , GT8G121LB , GT8J101 , GT8J102 , GT8N101 .

 


GT8G101
  GT8G101
  GT8G101
  GT8G101
 
GT8G101
  GT8G101
  GT8G101
  GT8G101
 

social 

LIST

Last Update

IGBT: BSM50GP60 | BSM50GP120 | BSM50GD60DLC_E3226 | BSM50GD60DLC | BSM50GD170DL | BSM50GD120DN2G | BSM50GD120DN2E3226 | BSM50GD120DN2 | BSM50GD120DLC | BSM50GB60DLC |

Enter a full or partial SMD code with a minimum of 2 letters or numbers