GT8G101 Datasheet. Specs and Replacement

Type Designator: GT8G101  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 20 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 6 V

|Ic| ⓘ - Maximum Collector Current: 8 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 5 V @25℃

tr ⓘ - Rise Time, typ: 900 nS

Package: TO3P

 GT8G101 Substitution

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GT8G101 datasheet

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GT8G101

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GT8G101

GT8G103 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT8G103 STROBE FLASH APPLICATIONS Unit mm 3rd Generation (A) Enhancement-Mode Low Saturation Voltage VCE (sat) = 8 V (Max.) (@IC = 150 A) 4.5 V Gate Drive ABSOLUTE MAXIMUM RATINGS (Ta = 25 C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Emitter Voltage VCES 400 V (B) DC VGES 6 V Gate-... See More ⇒

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GT8G101

GT8G151 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G151 Strobe Flash Applications Unit mm Unit mm Enhancement-mode TSON-8 TSON-8 Low gate drive voltage VGE = 2.5 V (min.) (@IC = 150 A) Peak collector current IC = 150 A (max) 0.65 0.05 0.65 0.05 8 7 6 5 8 7 6 5 Compact and Thin (TSON-8) package Absolute Maximum Ratings (Ta =... See More ⇒

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GT8G101

GT8G121 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT8G121 Unit mm STROBE FLASH APPLICATIONS 4th Generation (Trench Gate Structure) Enhancement-Mode Low Saturation Voltage V = 7 V (Max.) (@I = 150 A) CE (sat) C 4 V Gate Drive MAXIMUM RATINGS (Ta = 25 C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Emitter Voltage VCES 400 V DC VGES 6 V G... See More ⇒

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Specs: GT60M101, GT60M102, GT60M103, GT60M301, GT60M302, GT60M303, GT75G101, GT80J101, IRGP4066D, GT8G102, GT8G103, GT8G103LB, GT8G121, GT8G121LB, GT8J101, GT8J102, GT8N101

Keywords - GT8G101 transistor spec

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