All IGBT. TSG25N120CN Datasheet

 

TSG25N120CN Datasheet and Replacement


   Type Designator: TSG25N120CN
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 312 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 50 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 65 nS
   Coesⓘ - Output Capacitance, typ: 105 pF
   Qgⓘ - Total Gate Charge, typ: 170 nC
   Package: TO3PN
      - IGBT Cross-Reference

 

TSG25N120CN Datasheet (PDF)

 ..1. Size:392K  taiwansemi
tsg25n120cn.pdf pdf_icon

TSG25N120CN

TSG25N120CN N-Channel IGBT with FRD. TO-3PN Pin Definition: PRODUCT SUMMARY 1. Gate 2. Collector VCES (V) VGES (V) IC (A) 3. Emitter 1200 20 25 General Description The TSG25N120CN using proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation.

 5.1. Size:412K  taiwansemi
tsg25n120.pdf pdf_icon

TSG25N120CN

TSG25N120CN N-Channel IGBT with FRD. TO-3PN Pin Definition: PRODUCT SUMMARY 1. Gate 2. Collector VCES (V) VGES (V) IC (A) 3. Emitter 1200 20 25 General Description The TSG25N120CN using proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation.

Datasheet: GT40J325 , GT50J121 , GT50J325 , GT50J328 , GT50J341 , GT60J323 , GT60J323H , TSG15N120CN , FGW75N60HD , TSG40N120CE , TSG60N100CE , APT15GP90B , APT15GP90BDF1 , APT15GP90K , APT15GT60BR , APT15GT60BRD , APT15GT60KR .

History: STGW40H65FB | SRE50N120FSUD9 | IXSP16N60 | IXGH32N60BD1

Keywords - TSG25N120CN transistor datasheet

 TSG25N120CN cross reference
 TSG25N120CN equivalent finder
 TSG25N120CN lookup
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