TSG25N120CN Specs and Replacement
Type Designator: TSG25N120CN
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 312 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 50 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
tr ⓘ - Rise Time, typ: 65 nS
Coesⓘ - Output Capacitance, typ: 105 pF
Package: TO3PN
TSG25N120CN Substitution - IGBT ⓘ Cross-Reference Search
TSG25N120CN datasheet
tsg25n120cn.pdf
TSG25N120CN N-Channel IGBT with FRD. TO-3PN Pin Definition PRODUCT SUMMARY 1. Gate 2. Collector VCES (V) VGES (V) IC (A) 3. Emitter 1200 20 25 General Description The TSG25N120CN using proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. ... See More ⇒
tsg25n120.pdf
TSG25N120CN N-Channel IGBT with FRD. TO-3PN Pin Definition PRODUCT SUMMARY 1. Gate 2. Collector VCES (V) VGES (V) IC (A) 3. Emitter 1200 20 25 General Description The TSG25N120CN using proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. ... See More ⇒
Specs: GT40J325 , GT50J121 , GT50J325 , GT50J328 , GT50J341 , GT60J323 , GT60J323H , TSG15N120CN , IRGP4062D , TSG40N120CE , TSG60N100CE , APT15GP90B , APT15GP90BDF1 , APT15GP90K , APT15GT60BR , APT15GT60BRD , APT15GT60KR .
Keywords - TSG25N120CN transistor spec
TSG25N120CN cross reference
TSG25N120CN equivalent finder
TSG25N120CN lookup
TSG25N120CN substitution
TSG25N120CN replacement
🌐 : EN ES РУ
LIST
Last Update
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
Popular searches
2sc1400 | 2sd331 | 2sc1312 datasheet | 2sb647 | k3561 transistor | c3203 transistor | irfp450 equivalent | 2sb649