TSG25N120CN IGBT. Datasheet pdf. Equivalent
Type Designator: TSG25N120CN
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 312 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 50 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 65 nS
Coesⓘ - Output Capacitance, typ: 105 pF
Package: TO3PN
TSG25N120CN Transistor Equivalent Substitute - IGBT Cross-Reference Search
TSG25N120CN Datasheet (PDF)
tsg25n120cn.pdf
TSG25N120CN N-Channel IGBT with FRD. TO-3PN Pin Definition: PRODUCT SUMMARY 1. Gate 2. Collector VCES (V) VGES (V) IC (A) 3. Emitter 1200 20 25 General Description The TSG25N120CN using proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation.
tsg25n120.pdf
TSG25N120CN N-Channel IGBT with FRD. TO-3PN Pin Definition: PRODUCT SUMMARY 1. Gate 2. Collector VCES (V) VGES (V) IC (A) 3. Emitter 1200 20 25 General Description The TSG25N120CN using proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation.
Datasheet: GT40J325 , GT50J121 , GT50J325 , GT50J328 , GT50J341 , GT60J323 , GT60J323H , TSG15N120CN , FGW75N60HD , TSG40N120CE , TSG60N100CE , APT15GP90B , APT15GP90BDF1 , APT15GP90K , APT15GT60BR , APT15GT60BRD , APT15GT60KR .
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