TSG40N120CE Datasheet and Replacement
Type Designator: TSG40N120CE
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 208 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 64 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 8 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 82 nS
Coesⓘ - Output Capacitance, typ: 150 pF
Qgⓘ - Total Gate Charge, typ: 210 nC
Package: TO264
- IGBT Cross-Reference
TSG40N120CE Datasheet (PDF)
tsg40n120ce.pdf
TSG40N120CE N-Channel IGBT with FRD. TO-264 Pin Definition: PRODUCT SUMMARY 1. Gate 2. Collector VCES (V) VGES (V) IC (A) 3. Emitter 1200 20 40 General Description The TSG40N120CE using proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation.
tsg40n120.pdf
TSG40N120CE N-Channel IGBT with FRD. TO-264 Pin Definition: PRODUCT SUMMARY 1. Gate 2. Collector VCES (V) VGES (V) IC (A) 3. Emitter 1200 20 40 General Description The TSG40N120CE using proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation.
Datasheet: GT50J121 , GT50J325 , GT50J328 , GT50J341 , GT60J323 , GT60J323H , TSG15N120CN , TSG25N120CN , IHW15N120R3 , TSG60N100CE , APT15GP90B , APT15GP90BDF1 , APT15GP90K , APT15GT60BR , APT15GT60BRD , APT15GT60KR , APT200GN60J .
History: SRE15N065FSUDJ
Keywords - TSG40N120CE transistor datasheet
TSG40N120CE cross reference
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TSG40N120CE lookup
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History: SRE15N065FSUDJ
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