TSG40N120CE Specs and Replacement
Type Designator: TSG40N120CE
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 208 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 64 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
tr ⓘ - Rise Time, typ: 82 nS
Coesⓘ - Output Capacitance, typ: 150 pF
Package: TO264
TSG40N120CE Substitution - IGBT ⓘ Cross-Reference Search
TSG40N120CE datasheet
tsg40n120ce.pdf
TSG40N120CE N-Channel IGBT with FRD. TO-264 Pin Definition PRODUCT SUMMARY 1. Gate 2. Collector VCES (V) VGES (V) IC (A) 3. Emitter 1200 20 40 General Description The TSG40N120CE using proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. ... See More ⇒
tsg40n120.pdf
TSG40N120CE N-Channel IGBT with FRD. TO-264 Pin Definition PRODUCT SUMMARY 1. Gate 2. Collector VCES (V) VGES (V) IC (A) 3. Emitter 1200 20 40 General Description The TSG40N120CE using proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. ... See More ⇒
Specs: GT50J121 , GT50J325 , GT50J328 , GT50J341 , GT60J323 , GT60J323H , TSG15N120CN , TSG25N120CN , GT30F132 , TSG60N100CE , APT15GP90B , APT15GP90BDF1 , APT15GP90K , APT15GT60BR , APT15GT60BRD , APT15GT60KR , APT200GN60J .
History: SPT25N120F1A1T8TL | STGWA20M65DF2 | TGAN40N120F2D | TP020N120CA | RJH60M6DPQ-A0 | RJH60D6DPK | SRE60N065FSUD6
Keywords - TSG40N120CE transistor spec
TSG40N120CE cross reference
TSG40N120CE equivalent finder
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History: SPT25N120F1A1T8TL | STGWA20M65DF2 | TGAN40N120F2D | TP020N120CA | RJH60M6DPQ-A0 | RJH60D6DPK | SRE60N065FSUD6
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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