All IGBT. GT8J102 Datasheet

 

GT8J102 Datasheet and Replacement


   Type Designator: GT8J102
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 50 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 8 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 300 nS
   Package: DPAK
      - IGBT Cross-Reference

 

GT8J102 Datasheet (PDF)

 ..1. Size:222K  toshiba
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GT8J102

 8.1. Size:114K  toshiba
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GT8J102

Datasheet: GT80J101 , GT8G101 , GT8G102 , GT8G103 , GT8G103LB , GT8G121 , GT8G121LB , GT8J101 , IRGP4066D , GT8N101 , GT8Q101 , GT8Q102 , HGT1S10N120BNS , HGT1S11N120CNS , HGT1S12N60A4DS , HGT1S12N60A4S , HGT1S12N60B3 .

History: SKP15N60 | MWI35-12T7T

Keywords - GT8J102 transistor datasheet

 GT8J102 cross reference
 GT8J102 equivalent finder
 GT8J102 lookup
 GT8J102 substitution
 GT8J102 replacement

 

 
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