APT40GP60JDF2 PDF and Equivalents Search

 

APT40GP60JDF2 Specs and Replacement

Type Designator: APT40GP60JDF2

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 284 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 86 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃

tr ⓘ - Rise Time, typ: 29 nS

Coesⓘ - Output Capacitance, typ: 395 pF

Package: SOT227

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APT40GP60JDF2 datasheet

 ..1. Size:210K  apt
apt40gp60jdf2.pdf pdf_icon

APT40GP60JDF2

TYPICAL PERFORMANCE CURVES APT40GP60JDF2 APT40GP60JDF2 600V POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. "UL Recognized" ISOTOPfi Low Conduction Loss ... See More ⇒

 3.1. Size:553K  apt
apt40gp60jdq2.pdf pdf_icon

APT40GP60JDF2

TYPICAL PERFORMANCE CURVES APT40GP60JDQ2 600V APT40GP60JDQ2 POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. "UL Recongnized" ISOTOP file # 145592 Low... See More ⇒

 4.1. Size:97K  apt
apt40gp60j.pdf pdf_icon

APT40GP60JDF2

APT40GP60J 600V POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. "UL Recognized" C Low Conduction Loss 100 kHz operation @ 400V, 25A ISOTOP Low Gate ... See More ⇒

 5.1. Size:197K  apt
apt40gp60b2df2.pdf pdf_icon

APT40GP60JDF2

TYPICAL PERFORMANCE CURVES APT40GP60B2DF2 APT40GP60B2DF2 600V POWER MOS 7 IGBT TM T-Max The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency G switchmode power supplies. C E Low Conduction Loss 100 k... See More ⇒

Specs: APT35GP120J , APT35GP120JDF2 , APT35GT120JU2 , APT35GT120JU3 , APT40GF120JRD , APT40GP60B , APT40GP60B2DF2 , APT40GP60J , GT45F122 , APT40GP90B , APT40GP90B2DF2 , APT40GP90J , APT40GP90JDF2 , APT40GT60BR , APT45GP120B , APT45GP120B2DF2 , APT45GP120J .

History: MPMB50B120RH

Keywords - APT40GP60JDF2 transistor spec

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