Справочник IGBT. APT40GP60JDF2

 

APT40GP60JDF2 Даташит. Аналоги. Параметры и характеристики.


   Наименование: APT40GP60JDF2
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 284 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 86 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.2 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6 V
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 29 nS
   Coesⓘ - Выходная емкость, типовая: 395 pF
   Qgⓘ - Общий заряд затвора, typ: 135 nC
   Тип корпуса: SOT227
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APT40GP60JDF2 Datasheet (PDF)

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APT40GP60JDF2

TYPICAL PERFORMANCE CURVESAPT40GP60JDF2APT40GP60JDF2600VPOWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies."UL Recognized"ISOTOPfi Low Conduction Loss

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APT40GP60JDF2

TYPICAL PERFORMANCE CURVES APT40GP60JDQ2 600V APT40GP60JDQ2POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies."UL Recongnized"ISOTOP file # 145592 Low

 4.1. Size:97K  apt
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APT40GP60JDF2

APT40GP60J600VPOWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies."UL Recognized"C Low Conduction Loss 100 kHz operation @ 400V, 25A ISOTOP Low Gate

 5.1. Size:197K  apt
apt40gp60b2df2.pdfpdf_icon

APT40GP60JDF2

TYPICAL PERFORMANCE CURVESAPT40GP60B2DF2APT40GP60B2DF2600VPOWER MOS 7 IGBTTMT-MaxThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyGswitchmode power supplies.CE Low Conduction Loss 100 k

Другие IGBT... APT35GP120J , APT35GP120JDF2 , APT35GT120JU2 , APT35GT120JU3 , APT40GF120JRD , APT40GP60B , APT40GP60B2DF2 , APT40GP60J , GT30F131 , APT40GP90B , APT40GP90B2DF2 , APT40GP90J , APT40GP90JDF2 , APT40GT60BR , APT45GP120B , APT45GP120B2DF2 , APT45GP120J .

 

 
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