HGT1S12N60A4S Datasheet. Specs and Replacement

Type Designator: HGT1S12N60A4S  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 167 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 54 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃

tr ⓘ - Rise Time, typ: 8 nS

Package: TO263

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HGT1S12N60A4S datasheet

 ..1. Size:115K  1
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HGT1S12N60A4S

HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S Data Sheet May 1999 File Number 4656.2 600V, SMPS Series N-Channel IGBT Features The HGTP12N60A4, HGTG12N60A4 and >100kHz Operation at 390V, 12A HGT1S12N60A4S are MOS gated high voltage switching 200kHz Operation at 390V, 9A devices combining the best features of MOSFETs and 600V Switching SOA Capability bipolar transistors. These de... See More ⇒

 2.1. Size:173K  fairchild semi
 hgtg12n60a4d hgtp12n60a4d hgt1s12n60a4d.pdf pdf_icon

HGT1S12N60A4S

HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Features Anti-Parallel Hyperfast Diode >100kHz Operation . . . . . . . . . . . . . . . . . . . . . 390V, 12A The HGTG12N60A4D, HGTP12N60A4D and 200kHz Operation . . . . . . . . . . . . . . . . . . . . . . . 390V, 9A HGT1S12N60A4DS are MOS gated high voltage switching ... See More ⇒

 2.2. Size:207K  fairchild semi
 hgtg12n60a4 hgtp12n60a4 hgt1s12n60a4.pdf pdf_icon

HGT1S12N60A4S

HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A Data Sheet August 2003 600V, SMPS Series N-Channel IGBTs Features The HGTP12N60A4, HGTG12N60A4 and >100kHz Operation at 390V, 12A HGT1S12N60A4S9A are MOS gated high voltage switching 200kHz Operation at 390V, 9A devices combining the best features of MOSFETs and 600V Switching SOA Capability bipolar transistors. These devices ha... See More ⇒

 2.3. Size:574K  onsemi
 hgtg12n60a4d hgtp12n60a4d hgt1s12n60a4ds.pdf pdf_icon

HGT1S12N60A4S

SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 600 V HGTG12N60A4D, www.onsemi.com HGTP12N60A4D, HGT1S12N60A4DS C The HGTG12N60A4D, HGTP12N60A4D and HGT1S12N60A4DS are MOS gated high voltage switching devices G combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the E low on-state conduction los... See More ⇒

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Specs: GT8J101, GT8J102, GT8N101, GT8Q101, GT8Q102, HGT1S10N120BNS, HGT1S11N120CNS, HGT1S12N60A4DS, MGD623S, HGT1S12N60B3, HGT1S12N60B3D, HGT1S12N60B3DS, HGT1S12N60B3S, HGT1S12N60C3, HGT1S12N60C3D, HGT1S12N60C3DR, HGT1S12N60C3DRS

Keywords - HGT1S12N60A4S transistor spec

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