Справочник IGBT. HGT1S12N60A4S

 

HGT1S12N60A4S Даташит. Аналоги. Параметры и характеристики.


   Наименование: HGT1S12N60A4S
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 167 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 54 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2 V @25℃
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 8 nS
   Тип корпуса: TO263
     - подбор IGBT транзистора по параметрам

 

HGT1S12N60A4S Datasheet (PDF)

 ..1. Size:115K  1
 hgtp12n60a4 hgtg12n60a4 hgt1s12n60a4s.pdf pdf_icon

HGT1S12N60A4S

HGTP12N60A4, HGTG12N60A4,HGT1S12N60A4SData Sheet May 1999 File Number 4656.2600V, SMPS Series N-Channel IGBT FeaturesThe HGTP12N60A4, HGTG12N60A4 and >100kHz Operation at 390V, 12AHGT1S12N60A4S are MOS gated high voltage switching 200kHz Operation at 390V, 9Adevices combining the best features of MOSFETs and 600V Switching SOA Capabilitybipolar transistors. These de

 2.1. Size:173K  fairchild semi
 hgtg12n60a4d hgtp12n60a4d hgt1s12n60a4d.pdf pdf_icon

HGT1S12N60A4S

HGTG12N60A4D, HGTP12N60A4D,HGT1S12N60A4DSData Sheet December 2001600V, SMPS Series N-Channel IGBT with FeaturesAnti-Parallel Hyperfast Diode >100kHz Operation . . . . . . . . . . . . . . . . . . . . . 390V, 12AThe HGTG12N60A4D, HGTP12N60A4D and 200kHz Operation . . . . . . . . . . . . . . . . . . . . . . . 390V, 9AHGT1S12N60A4DS are MOS gated high voltage switching

 2.2. Size:207K  fairchild semi
 hgtg12n60a4 hgtp12n60a4 hgt1s12n60a4.pdf pdf_icon

HGT1S12N60A4S

HGTP12N60A4, HGTG12N60A4,HGT1S12N60A4S9AData Sheet August 2003600V, SMPS Series N-Channel IGBTs FeaturesThe HGTP12N60A4, HGTG12N60A4 and >100kHz Operation at 390V, 12AHGT1S12N60A4S9A are MOS gated high voltage switching 200kHz Operation at 390V, 9Adevices combining the best features of MOSFETs and 600V Switching SOA Capabilitybipolar transistors. These devices ha

 2.3. Size:574K  onsemi
 hgtg12n60a4d hgtp12n60a4d hgt1s12n60a4ds.pdf pdf_icon

HGT1S12N60A4S

SMPS Series N-ChannelIGBT with Anti-ParallelHyperfast Diode600 VHGTG12N60A4D,www.onsemi.comHGTP12N60A4D,HGT1S12N60A4DSCThe HGTG12N60A4D, HGTP12N60A4D andHGT1S12N60A4DS are MOS gated high voltage switching devicesGcombining the best features of MOSFETs and bipolar transistors.These devices have the high input impedance of a MOSFET and theElow on-state conduction los

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... GT8J101 , GT8J102 , GT8N101 , GT8Q101 , GT8Q102 , HGT1S10N120BNS , HGT1S11N120CNS , HGT1S12N60A4DS , IRG4PC50U , HGT1S12N60B3 , HGT1S12N60B3D , HGT1S12N60B3DS , HGT1S12N60B3S , HGT1S12N60C3 , HGT1S12N60C3D , HGT1S12N60C3DR , HGT1S12N60C3DRS .

History: APT54GA60BD30 | IXSQ10N60B2D1

 

 
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