APT65GP60B2 Spec and Replacement, IGBT Equivalent Finder, Cross Reference

APT65GP60B2 Specs and Replacement

Type Designator: APT65GP60B2

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 833 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 100 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃

tr ⓘ - Rise Time, typ: 54 nS

Coesⓘ - Output Capacitance, typ: 580 pF

Package: TMAX

APT65GP60B2 Substitution

- IGBTⓘ Cross-Reference Search

APT65GP60B2 datasheet

..1. Size:88K apt
apt65gp60b2.pdf pdf_icon

APT65GP60B2 600V POWER MOS 7 IGBT T-MaxTM The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G C E Low Conduction Loss 100 kHz operation @ 400V, 54A C Low Gate Charge... See More ⇒

0.1. Size:90K apt
apt65gp60b2g.pdf pdf_icon

5.1. Size:96K apt
apt65gp60j.pdf pdf_icon

APT65GP60J 600V POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency "UL Recognized" switchmode power supplies. ISOTOP Low Conduction Loss 100 kHz operation @ 400V, 33A C Low Gate... See More ⇒

5.2. Size:478K apt
apt65gp60jdq2.pdf pdf_icon

TYPICAL PERFORMANCE CURVES APT65GP60JDQ2 600V APT65GP60JDQ2 POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. "UL Recognized" ISOTOP file # E145592 Low... See More ⇒