All IGBT. APT65GP60B2 Datasheet

 

APT65GP60B2 Datasheet and Replacement


   Type Designator: APT65GP60B2
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 833 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 100 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 54 nS
   Coesⓘ - Output Capacitance, typ: 580 pF
   Qgⓘ - Total Gate Charge, typ: 210 nC
   Package: TMAX
      - IGBT Cross-Reference

 

APT65GP60B2 Datasheet (PDF)

 ..1. Size:88K  apt
apt65gp60b2.pdf pdf_icon

APT65GP60B2

APT65GP60B2600V POWER MOS 7 IGBTT-MaxTMThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies.GCE Low Conduction Loss 100 kHz operation @ 400V, 54AC Low Gate Charge

 0.1. Size:90K  apt
apt65gp60b2g.pdf pdf_icon

APT65GP60B2

APT65GP60B2600V POWER MOS 7 IGBTT-MaxTMThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies.GCE Low Conduction Loss 100 kHz operation @ 400V, 54AC Low Gate Charge

 5.1. Size:96K  apt
apt65gp60j.pdf pdf_icon

APT65GP60B2

APT65GP60J600V POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequency"UL Recognized"switchmode power supplies. ISOTOP Low Conduction Loss 100 kHz operation @ 400V, 33AC Low Gate

 5.2. Size:478K  apt
apt65gp60jdq2.pdf pdf_icon

APT65GP60B2

TYPICAL PERFORMANCE CURVES APT65GP60JDQ2 600V APT65GP60JDQ2POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies."UL Recognized"ISOTOP file # E145592 Low

Datasheet: APT50GT120JU3 , APT60GF120JRD , APT60GF60JU2 , APT60GF60JU3 , APT60GT60BR , APT60GT60JR , APT60GT60JRD , APT60GU30B , FGH30S130P , APT65GP60J , APT65GP60JDF2 , APT65GP60L2DF2 , APT75GP120B2 , APT75GP120J , APT75GP120JDF3 , APT75GT120JU2 , APT75GT120JU3 .

History: MG25Q6ES51 | 7MBR75U2B060

Keywords - APT65GP60B2 transistor datasheet

 APT65GP60B2 cross reference
 APT65GP60B2 equivalent finder
 APT65GP60B2 lookup
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