APT65GP60B2 datasheet, аналоги, основные параметры

Наименование: APT65GP60B2  📄📄 

Тип транзистора: IGBT

Тип управляющего канала: N

Предельные значения

Pc ⓘ - Максимальная рассеиваемая мощность: 833 W

|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V

|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V

|Ic| ⓘ - Максимальный постоянный ток коллектора: 100 A @25℃

Tj ⓘ - Максимальная температура перехода: 150 ℃

Электрические характеристики

|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.2 V @25℃

tr ⓘ - Время нарастания типовое: 54 nS

Coesⓘ - Выходная емкость, типовая: 580 pF

Тип корпуса: TMAX

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 Аналог (замена) для APT65GP60B2

- подбор ⓘ IGBT транзистора по параметрам

 

APT65GP60B2 даташит

 ..1. Size:88K  apt
 apt65gp60b2.pdf pdf_icon

APT65GP60B2

APT65GP60B2 600V POWER MOS 7 IGBT T-MaxTM The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G C E Low Conduction Loss 100 kHz operation @ 400V, 54A C Low Gate Charge

 0.1. Size:90K  apt
 apt65gp60b2g.pdf pdf_icon

APT65GP60B2

APT65GP60B2 600V POWER MOS 7 IGBT T-MaxTM The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G C E Low Conduction Loss 100 kHz operation @ 400V, 54A C Low Gate Charge

 5.1. Size:96K  apt
 apt65gp60j.pdf pdf_icon

APT65GP60B2

APT65GP60J 600V POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency "UL Recognized" switchmode power supplies. ISOTOP Low Conduction Loss 100 kHz operation @ 400V, 33A C Low Gate

 5.2. Size:478K  apt
 apt65gp60jdq2.pdf pdf_icon

APT65GP60B2

TYPICAL PERFORMANCE CURVES APT65GP60JDQ2 600V APT65GP60JDQ2 POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. "UL Recognized" ISOTOP file # E145592 Low

ПОКАЗАТЬ ЕЩЁ

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