APT65GP60J Datasheet. Specs and Replacement

Type Designator: APT65GP60J  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 431 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 130 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃

tr ⓘ - Rise Time, typ: 54 nS

Coesⓘ - Output Capacitance, typ: 580 pF

Package: SOT227

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APT65GP60J datasheet

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APT65GP60J

APT65GP60J 600V POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency "UL Recognized" switchmode power supplies. ISOTOP Low Conduction Loss 100 kHz operation @ 400V, 33A C Low Gate... See More ⇒

 0.1. Size:478K  apt
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APT65GP60J

TYPICAL PERFORMANCE CURVES APT65GP60JDQ2 600V APT65GP60JDQ2 POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. "UL Recognized" ISOTOP file # E145592 Low... See More ⇒

 0.2. Size:204K  apt
apt65gp60jdf2.pdf pdf_icon

APT65GP60J

TYPICAL PERFORMANCE CURVES APT65GP60JDF2 APT65GP60JDF2 600V POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency "UL Recognized" switchmode power supplies. ISOTOP Low Conduction Loss 1... See More ⇒

 5.1. Size:444K  apt
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APT65GP60J

TYPICAL PERFORMANCE CURVES APT65GP60L2DQ2 600V APT65GP60L2DQ2 APT65GP60L2DQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT TO-264 Max The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high ... See More ⇒

Specs: APT60GF120JRD, APT60GF60JU2, APT60GF60JU3, APT60GT60BR, APT60GT60JR, APT60GT60JRD, APT60GU30B, APT65GP60B2, RJH60F7BDPQ-A0, APT65GP60JDF2, APT65GP60L2DF2, APT75GP120B2, APT75GP120J, APT75GP120JDF3, APT75GT120JU2, APT75GT120JU3, APT80GP60B2

Keywords - APT65GP60J transistor spec

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