APT65GP60J Даташит. Аналоги. Параметры и характеристики.
Наименование: APT65GP60J
Тип транзистора: IGBT
Тип управляющего канала: N
Pcⓘ - Максимальная рассеиваемая мощность: 431 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 130 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.2 V @25℃
Tjⓘ - Максимальная температура перехода: 150 ℃
trⓘ - Время нарастания типовое: 54 nS
Coesⓘ - Выходная емкость, типовая: 580 pF
Тип корпуса: SOT227
- подбор IGBT транзистора по параметрам
APT65GP60J Datasheet (PDF)
apt65gp60j.pdf

APT65GP60J600V POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequency"UL Recognized"switchmode power supplies. ISOTOP Low Conduction Loss 100 kHz operation @ 400V, 33AC Low Gate
apt65gp60jdq2.pdf

TYPICAL PERFORMANCE CURVES APT65GP60JDQ2 600V APT65GP60JDQ2POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies."UL Recognized"ISOTOP file # E145592 Low
apt65gp60jdf2.pdf

TYPICAL PERFORMANCE CURVES APT65GP60JDF2APT65GP60JDF2600V POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequency"UL Recognized"switchmode power supplies. ISOTOP Low Conduction Loss 1
apt65gp60l2dq2g.pdf

TYPICAL PERFORMANCE CURVES APT65GP60L2DQ2 600V APT65GP60L2DQ2 APT65GP60L2DQ2G**G Denotes RoHS Compliant, Pb Free Terminal Finish.POWER MOS 7 IGBTTO-264MaxThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high
Другие IGBT... APT60GF120JRD , APT60GF60JU2 , APT60GF60JU3 , APT60GT60BR , APT60GT60JR , APT60GT60JRD , APT60GU30B , APT65GP60B2 , IRG4PC40W , APT65GP60JDF2 , APT65GP60L2DF2 , APT75GP120B2 , APT75GP120J , APT75GP120JDF3 , APT75GT120JU2 , APT75GT120JU3 , APT80GP60B2 .
History: NGTB25N120L | GT50J301 | IRGP4630DPBF | FF100R12RT4 | 6MBI100VX-120-50 | STGW20V60F | SKM100GAL12T4
History: NGTB25N120L | GT50J301 | IRGP4630DPBF | FF100R12RT4 | 6MBI100VX-120-50 | STGW20V60F | SKM100GAL12T4



Список транзисторов
Обновления
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