APT75GP120JDF3 Datasheet. Specs and Replacement
Type Designator: APT75GP120JDF3 📄📄
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 543 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 128 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.3 V @25℃
tr ⓘ - Rise Time, typ: 40 nS
Coesⓘ - Output Capacitance, typ: 460 pF
Package: SOT227
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APT75GP120JDF3 datasheet
apt75gp120jdq3.pdf
TYPICAL PERFORMANCE CURVES APT75GP120JDQ3 1200V APT75GP120JDQ3 POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. "UL Recognized" ISOTOP file # E145592 ... See More ⇒
apt75gp120j.pdf
APT75GP120J 1200V POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, "UL Recognized" high voltage switching applications and has been optimized for high frequency ISOTOP switchmode power supplies. C Low Conduction Loss RBSOA rated Low Gate Charge G ... See More ⇒
apt75gp120b2.pdf
APT75GP120B2 1200V POWER MOS 7 IGBT T-MaxTM The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G C E C Low Conduction Loss 100 kHz operation @ 800V, 20A Low Gate Char... See More ⇒
Specs: APT60GT60JRD, APT60GU30B, APT65GP60B2, APT65GP60J, APT65GP60JDF2, APT65GP60L2DF2, APT75GP120B2, APT75GP120J, IXRH40N120, APT75GT120JU2, APT75GT120JU3, APT80GP60B2, APT80GP60J, APT80GP60JDF3, APT83GU30B, APT8GT60KR, APTGF100A120T
Keywords - APT75GP120JDF3 transistor spec
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