APT75GP120JDF3 Spec and Replacement
Type Designator: APT75GP120JDF3
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 543 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 128 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.3 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 40 nS
Coesⓘ - Output Capacitance, typ: 460 pF
Package: SOT227
APT75GP120JDF3 Transistor Equivalent Substitute - IGBT Cross-Reference Search
APT75GP120JDF3 specs
apt75gp120jdq3.pdf
TYPICAL PERFORMANCE CURVES APT75GP120JDQ3 1200V APT75GP120JDQ3 POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. "UL Recognized" ISOTOP file # E145592 ... See More ⇒
apt75gp120j.pdf
APT75GP120J 1200V POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, "UL Recognized" high voltage switching applications and has been optimized for high frequency ISOTOP switchmode power supplies. C Low Conduction Loss RBSOA rated Low Gate Charge G ... See More ⇒
apt75gp120b2.pdf
APT75GP120B2 1200V POWER MOS 7 IGBT T-MaxTM The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G C E C Low Conduction Loss 100 kHz operation @ 800V, 20A Low Gate Char... See More ⇒
Specs: APT60GT60JRD , APT60GU30B , APT65GP60B2 , APT65GP60J , APT65GP60JDF2 , APT65GP60L2DF2 , APT75GP120B2 , APT75GP120J , BT60T60ANFK , APT75GT120JU2 , APT75GT120JU3 , APT80GP60B2 , APT80GP60J , APT80GP60JDF3 , APT83GU30B , APT8GT60KR , APTGF100A120T .
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