Справочник IGBT. APT75GP120JDF3

 

APT75GP120JDF3 Даташит. Аналоги. Параметры и характеристики.


   Наименование: APT75GP120JDF3
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 543 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 128 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 3.3 V @25℃
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 40 nS
   Coesⓘ - Выходная емкость, типовая: 460 pF
   Тип корпуса: SOT227
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APT75GP120JDF3 Datasheet (PDF)

 ..1. Size:203K  apt
 apt75gp120jdf3.pdf pdf_icon

APT75GP120JDF3

TYPICAL PERFORMANCE CURVES APT75GP120JDF3APT75GP120JDF31200V POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequency"UL Recognized"ISOTOPswitchmode power supplies. Low Conduction Loss

 2.1. Size:453K  apt
 apt75gp120jdq3.pdf pdf_icon

APT75GP120JDF3

TYPICAL PERFORMANCE CURVES APT75GP120JDQ3 1200V APT75GP120JDQ3POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies."UL Recognized"ISOTOP file # E145592

 3.1. Size:33K  apt
 apt75gp120j.pdf pdf_icon

APT75GP120JDF3

APT75GP120J1200V POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,"UL Recognized"high voltage switching applications and has been optimized for high frequencyISOTOPswitchmode power supplies.C Low Conduction Loss RBSOA rated Low Gate ChargeG

 4.1. Size:94K  apt
 apt75gp120b2.pdf pdf_icon

APT75GP120JDF3

APT75GP120B21200V POWER MOS 7 IGBTT-MaxTMThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies.GCEC Low Conduction Loss 100 kHz operation @ 800V, 20A Low Gate Char

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Другие IGBT... APT60GT60JRD , APT60GU30B , APT65GP60B2 , APT65GP60J , APT65GP60JDF2 , APT65GP60L2DF2 , APT75GP120B2 , APT75GP120J , BT15T120ANF , APT75GT120JU2 , APT75GT120JU3 , APT80GP60B2 , APT80GP60J , APT80GP60JDF3 , APT83GU30B , APT8GT60KR , APTGF100A120T .

History: MMG200D120B6TC | APTGT75DA120D1 | AOB30B65LN2V

 

 
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