HGTP12N60C3R Datasheet. Specs and Replacement
Type Designator: HGTP12N60C3R 📄📄
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ -
Maximum Power Dissipation: 104 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 24 A @25℃
Tj ⓘ -
Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ -
Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
tr ⓘ - Rise Time, typ: 37 nS
Package: TO220
HGTP12N60C3R Substitution
- IGBTⓘ Cross-Reference Search
HGTP12N60C3R datasheet
3.4. Size:169K fairchild semi
hgtp12n60c3 hgt1s12n60c3.pdf 
HGTP12N60C3, HGT1S12N60C3S Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBTs Features The HGTP12N60C3 and HGT1S12N60C3S are MOS gated 24A, 600V at TC = 25oC high voltage switching devices combining the best features 600V Switching SOA Capability of MOSFETs and bipolar transistors. These devices have the Typical Fall Time. . . . . . . . . . . . . . . . 230ns a... See More ⇒
3.5. Size:151K fairchild semi
hgtp12n60c3d hgt1s12n60c3d.pdf
HGTP12N60C3D, HGT1S12N60C3DS Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBT Features with Anti-Parallel Hyperfast Diodes 24A, 600V at TC = 25oC This family of MOS gated high voltage switching devices Typical Fall Time at TJ = 150oC . . . . . . . . . . . . . . . . 210ns combine the best features of MOSFETs and bipolar Short Circuit Rating transistors. The ... See More ⇒
3.6. Size:271K onsemi
hgtp12n60c3d hgt1s12n60c3ds.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
3.7. Size:188K harris semi
hgtp12n60c3.pdf
HGTP12N60C3, HGT1S12N60C3, S E M I C O N D U C T O R HGT1S12N60C3S August 1995 24A, 600V, UFS Series N-Channel IGBT Features Packages JEDEC TO-220AB EMITTER 24A, 600V at TC = +25oC COLLECTOR GATE 600V Switching SOA Capability Typical Fall Time - 230ns at TJ = +150oC COLLECTOR (FLANGE) Short Circuit Rating Low Conduction Loss JEDEC TO-262AA Description EMITTER... See More ⇒
Specs: HGT1S12N60B3D, HGT1S12N60B3DS, HGT1S12N60B3S, HGT1S12N60C3, HGT1S12N60C3D, HGT1S12N60C3DR, HGT1S12N60C3DRS, HGT1S12N60C3DS, STGW60V60DF, HGT1S12N60C3R, HGT1S12N60C3RS, HGT1S12N60C3S, HGT1S12N60C3S9A, HGT1S1N120BNDS9A, HGT1S14N36G3VL, HGT1S14N36G3VLS, HGT1S14N36G3VLS9A
Keywords - HGTP12N60C3R transistor spec
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