FGW30N60VD IGBT. Datasheet pdf. Equivalent
Type Designator: FGW30N60VD
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 230 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 55 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 60 nS
Coesⓘ - Output Capacitance, typ: 145 pF
Package: TO247
FGW30N60VD Transistor Equivalent Substitute - IGBT Cross-Reference Search
FGW30N60VD Datasheet (PDF)
fgw30n60vd.pdf
http://www.fujielectric.com/products/semiconductor/FGW30N60VD Discrete IGBTDiscrete IGBT (High-Speed V series)600V / 30AFeaturesLow power lossLow switching surge and noiseHigh reliability, high ruggedness (RBSOA, SCSOA etc.)ApplicationsInverter for Motor driveAC and DC Servo drive amplifierUninterruptible power supplyMaximum Ratings and Characteristics Equivalent circuit
fgw30n120hd.pdf
http://www.fujielectric.com/products/semiconductor/FGW30N120HD Discrete IGBTDiscrete IGBT (High-Speed V series)1200V / 30AFeaturesLow power lossLow switching surge and noiseHigh reliability, high ruggedness (RBSOA, SCSOA etc.)ApplicationsUninterruptible power supplyPower coditionnerPower factor correction circuitMaximum Ratings and Characteristics Equivalent circuit Ab
fgw30n120h.pdf
http://www.fujielectric.com/products/semiconductor/FGW30N120H Discrete IGBTDiscrete IGBT (High-Speed V series)1200V / 30AFeaturesLow power lossLow switching surge and noiseHigh reliability, high ruggedness (RBSOA, SCSOA etc.)ApplicationsUninterruptible power supplyPower coditionnerPower factor correction circuitMaximum Ratings and Characteristics Equivalent circuit Abs
Datasheet: FGW40N120VD , FGW40N120W , FGW40N120WD , FGW25N120VD , FGW25N120W , FGW25N120WD , FGW30N120H , FGW30N120HD , FGPF4533 , FGW35N60H , FGW35N60HC , FGW35N60HD , FGW50N60H , FGW50N60HC , FGW50N60HD , FGW50N60VD , FGW75N60H .
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