All IGBT. FGW50N60VD Datasheet

 

FGW50N60VD IGBT. Datasheet pdf. Equivalent


   Type Designator: FGW50N60VD
   Type: IGBT + Anti-Parallel Diode
   Marking Code: 50G60VD
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 360 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 85 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7.2 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 90 nS
   Coesⓘ - Output Capacitance, typ: 215 pF
   Qgⓘ - Total Gate Charge, typ: 360 nC
   Package: TO247

 FGW50N60VD Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

FGW50N60VD Datasheet (PDF)

 0.1. Size:625K  fuji
 fgw50n60vda.pdf

FGW50N60VD FGW50N60VD

http://www.fujielectric.com/products/semiconductor/FGW50N60VD Discrete IGBTDiscrete IGBT (High-Speed V series)600V / 50AFeaturesLow power lossLow switching surge and noiseHigh reliability, high ruggedness (RBSOA, SCSOA etc.)ApplicationsInverter for Motor driveAC and DC Servo drive amplifierUninterruptible power supplyMaximum Ratings and Characteristics Equivalent circuit

 6.1. Size:565K  fuji
 fgw50n60h.pdf

FGW50N60VD FGW50N60VD

http://www.fujielectric.com/products/semiconductor/FGW50N60H Discrete IGBTDiscrete IGBT (High-Speed V series)600V / 50AFeaturesLow power lossLow switching surge and noiseHigh reliability, high ruggedness (RBSOA, SCSOA etc.)ApplicationsUninterruptible power supplyPower coditionnerPower factor correction circuitMaximum Ratings and Characteristics Equivalent circuit Absol

 6.2. Size:560K  fuji
 fgw50n60hd.pdf

FGW50N60VD FGW50N60VD

http://www.fujielectric.com/products/semiconductor/FGW50N60HD Discrete IGBTDiscrete IGBT (High-Speed V series)600V / 50AFeaturesLow power lossLow switching surge and noiseHigh reliability, high ruggedness (RBSOA, SCSOA etc.)ApplicationsUninterruptible power supplyPower coditionnerPower factor correction circuitMaximum Ratings and Characteristics Equivalent circuit Abso

 6.3. Size:569K  fuji
 fgw50n60hc.pdf

FGW50N60VD FGW50N60VD

http://www.fujielectric.com/products/semiconductor/FGW50N60HC Discrete IGBTDiscrete IGBT (High-Speed V series)600V / 50AFeaturesLow power lossLow switching surge and noiseHigh reliability, high ruggedness (RBSOA, SCSOA etc.)ApplicationsUninterruptible power supplyPower coditionnerPower factor correction circuitMaximum Ratings and Characteristics Equivalent circuit Abso

Datasheet: FGW30N120HD , FGW30N60VD , FGW35N60H , FGW35N60HC , FGW35N60HD , FGW50N60H , FGW50N60HC , FGW50N60HD , IRG7S313U , FGW75N60H , FGW75N60HD , FGW85N60RB , 1MBH60-100 , FGL40N120AN , BRG15N120D , BRG20N120D , BRG25N120D .

 

 
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