Справочник IGBT. FGW50N60VD

 

FGW50N60VD Даташит. Аналоги. Параметры и характеристики.


   Наименование: FGW50N60VD
   Тип транзистора: IGBT + Diode
   Маркировка: 50G60VD
   Тип управляющего канала: N
   Pc ⓘ - Максимальная рассеиваемая мощность: 360 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic| ⓘ - Максимальный постоянный ток коллектора: 85 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.6 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 7.2 V
   Tj ⓘ - Максимальная температура перехода: 175 ℃
   tr ⓘ - Время нарастания типовое: 90 nS
   Coesⓘ - Выходная емкость, типовая: 215 pF
   Qg ⓘ - Общий заряд затвора, typ: 360 nC
   Тип корпуса: TO247
 

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FGW50N60VD Datasheet (PDF)

 0.1. Size:625K  fuji
 fgw50n60vda.pdf pdf_icon

FGW50N60VD

http://www.fujielectric.com/products/semiconductor/FGW50N60VD Discrete IGBTDiscrete IGBT (High-Speed V series)600V / 50AFeaturesLow power lossLow switching surge and noiseHigh reliability, high ruggedness (RBSOA, SCSOA etc.)ApplicationsInverter for Motor driveAC and DC Servo drive amplifierUninterruptible power supplyMaximum Ratings and Characteristics Equivalent circuit

 6.1. Size:565K  fuji
 fgw50n60h.pdf pdf_icon

FGW50N60VD

http://www.fujielectric.com/products/semiconductor/FGW50N60H Discrete IGBTDiscrete IGBT (High-Speed V series)600V / 50AFeaturesLow power lossLow switching surge and noiseHigh reliability, high ruggedness (RBSOA, SCSOA etc.)ApplicationsUninterruptible power supplyPower coditionnerPower factor correction circuitMaximum Ratings and Characteristics Equivalent circuit Absol

 6.2. Size:560K  fuji
 fgw50n60hd.pdf pdf_icon

FGW50N60VD

http://www.fujielectric.com/products/semiconductor/FGW50N60HD Discrete IGBTDiscrete IGBT (High-Speed V series)600V / 50AFeaturesLow power lossLow switching surge and noiseHigh reliability, high ruggedness (RBSOA, SCSOA etc.)ApplicationsUninterruptible power supplyPower coditionnerPower factor correction circuitMaximum Ratings and Characteristics Equivalent circuit Abso

 6.3. Size:569K  fuji
 fgw50n60hc.pdf pdf_icon

FGW50N60VD

http://www.fujielectric.com/products/semiconductor/FGW50N60HC Discrete IGBTDiscrete IGBT (High-Speed V series)600V / 50AFeaturesLow power lossLow switching surge and noiseHigh reliability, high ruggedness (RBSOA, SCSOA etc.)ApplicationsUninterruptible power supplyPower coditionnerPower factor correction circuitMaximum Ratings and Characteristics Equivalent circuit Abso

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... FGW30N120HD , FGW30N60VD , FGW35N60H , FGW35N60HC , FGW35N60HD , FGW50N60H , FGW50N60HC , FGW50N60HD , IRG4PC40W , FGW75N60H , FGW75N60HD , FGW85N60RB , 1MBH60-100 , FGL40N120AN , BRG15N120D , BRG20N120D , BRG25N120D .

History: FGP5N60LS

 

 
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